75 A Insulated Gate Bipolar Transistors (IGBT) 325

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXSH45N120

IXYS Corporation

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

1650 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

330 ns

MG75J2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

FP75R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

385 W

75 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

NXH80T120L3Q0P3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

NXH80T120L3Q0S3TG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

SNXH160B120L2Q0PG-N

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

167 W

75 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

359 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

80 ns

FGH50N3

Onsemi

N-CHANNEL

SINGLE

NO

463 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

NXH80T120L3Q0S3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

SNXH160B120L2Q0PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

167 W

75 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

359 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

80 ns

SNXH75M65L3F2STG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

236 W

75 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.2 V

PIN/PEG

RECTANGULAR

1

432 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-PUFM-P32

ISOLATED

LOW SWITCHING LOSSES

129 ns

FPF2G75FH07BP

Onsemi

N-CHANNEL

COMPLEX

NO

236 W

75 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

462 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-XUFM-X32

LOW CONDUCTION LOSS

124 ns

A2P75S12M3

STMicroelectronics

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

454.5 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

517 ns

33

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

235 ns

IRGNI0075M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

FS3L50R07W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

12

346 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

IRGS30B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

237 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

74 ns

F3L50R06W1E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

175 W

75 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

295 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

OM60L60HB

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

METAL

MOTOR CONTROL

1.8 V

SOLDER LUG

SQUARE

2

1100 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

600 V

TIN LEAD

DUAL

S-MDFM-D6

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

250 ns

FP75R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

385 W

75 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

IRG5K75HF12A

Infineon Technologies

N-Channel

75 A

2.6 V

570 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

90000 ns

IHW40T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

92 ns

IHW40T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

92 ns

IKWH30N65WR5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

416 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

61 ns

F4-50R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

225 W

75 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

43 ns

IKWH40N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

175 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

376 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

61 ns

FS3L50R07W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

IGC70T120T6RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGS30B60KTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

74 ns

IFS75B12N3E4_B39

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

IGC70T120T6RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FP75R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRG5U75HH06E

Infineon Technologies

N-Channel

75 A

725 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

IRG5U75HF12A

Infineon Technologies

N-Channel

75 A

3.5 V

630 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

100000 ns

FS3L50R07W2H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FP75R07N2E4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRGKI0075M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IFS75B12N3T4_B31

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

IRG5U75HF06A

Infineon Technologies

N-Channel

75 A

2.9 V

725 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

IGC89T170S8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGTI0075M12

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IFS75B12N3E4_B32

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

IRGC4066B

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

FS3L50R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

IRGS30B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

74 ns

IHW40T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

92 ns

FP30R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

IGC89T170S8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FP75R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

OM60L60PB

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

METAL

MOTOR CONTROL

1.8 V

SOLDER LUG

SQUARE

2

1100 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

600 V

TIN LEAD

DUAL

S-MDFM-D6

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

250 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.