75 A Insulated Gate Bipolar Transistors (IGBT) 325

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

OM60L60SB

Infineon Technologies

250 W

75 A

1.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

F450R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP75R12N2T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

199 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

F430R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRG5K75HF06A

Infineon Technologies

N-Channel

75 A

2.1 V

360 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

90000 ns

IRG5K75HH06E

Infineon Technologies

N-Channel

75 A

2.1 V

360 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

90000 ns

FF75R12RT4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

395 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

490 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

185 ns

BSM50GB60DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

75 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

IRGSL30B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

237 ns

3

IN-LINE

175 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262

e0

74 ns

FP75R12N2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

199 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRGSL30B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

370 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

THROUGH-HOLE

RECTANGULAR

1

42 ns

237 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262

e3

30

260

74 ns

BSM50GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

BSM35GB120DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

310 W

75 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

2

370 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

110 ns

IRGS30B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

74 ns

FP75R12KT4_B15

Infineon Technologies

N-CHANNEL

COMPLEX

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

1

ISOLATED

Not Qualified

260

210 ns

IFS75B12N3E4_B31

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

IRG5K75FF06E

Infineon Technologies

N-Channel

75 A

2.1 V

360 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

90000 ns

FP75R12N3T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

7

401 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X35

ISOLATED

205 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

FP75R12N2T7P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

199 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

FP75R12N3T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

7

401 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X35

ISOLATED

205 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

IKWH30N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

416 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

61 ns

SIGC84T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

UPPER

R-XUUC-N

Not Qualified

e3

330 ns

SIGC144T170R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC84T120R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

SIGC121T120R2CLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

420 ns

10

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N10

110 ns

SIGC101T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC84T120R3EX1SA4

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC39T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUUC-N3

Not Qualified

e3

SIGC121T120R2CSX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

SIGC61T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

205 ns

4

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

SIGC40T65R3E

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SIGC121T120R2CLX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

420 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC40T60R3X1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N6

Not Qualified

e3

SIGC101T170R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC84T120R3LEX1SA3

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC61T60NCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

205 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

SIGC101T170R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC144T170R2CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

10

UNCASED CHIP

SILICON

1700 V

UPPER

S-XUUC-N10

SIGC39T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

401 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

SIGC84T120R3LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

SIGC61T60N

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

175 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

85 ns

SIGC121T120R2CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

S-XUUC-N

1

Not Qualified

INTEGRATED GATE RESISTOR

260

SIGC84T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

UPPER

R-XUUC-N10

Not Qualified

e3

340 ns

SIGC121T120R2CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

420 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC40T60R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC144T170R2CX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

10

UNCASED CHIP

175 Cel

SILICON

1700 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC40T60R3EX1SA3

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC39T60EX1SA1

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.