8 A Insulated Gate Bipolar Transistors (IGBT) 82

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG8Q6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1200 V									Not Qualified
GT8Q101(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V				TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			400 ns
MG8J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE		50 W	8 A				4 V			6					Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V							Not Qualified
GT8Q101	Toshiba	N-CHANNEL	SINGLE	NO	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	100 W	150 Cel	SILICON	1200 V		20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0
MG8N6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	6		850 ns	17	FLANGE MOUNT				SILICON	1000 V					UPPER	R-PUFM-D17		ISOLATED	Not Qualified	HIGH SPEED					350 ns
GT8G121	Toshiba	N-CHANNEL		NO	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V		Tin/Lead (Sn/Pb)								e0
GT8G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY			7 V	GULL WING	RECTANGULAR	1		2400 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V	1.5 V	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1700 ns
GT8G121(SM)	Toshiba	N-CHANNEL		YES	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V		Tin/Lead (Sn/Pb)								e0
GT8G103	Toshiba	N-CHANNEL		NO	1.3 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V
MG8N6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1000 V									Not Qualified
GT8G131(TE12L)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY			7 V	GULL WING	RECTANGULAR	1		2400 ns	8	SMALL OUTLINE			150 Cel	SILICON	400 V		6 V	1.5 V		DUAL	R-PDSO-G8									1700 ns
GT8G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1400 ns
GT8J102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED
GT8G103(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE			150 Cel	SILICON	400 V					SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1400 ns
MG8Q6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1200 V									Not Qualified
GT8G103(SM)	Toshiba	N-CHANNEL		YES	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V
GT8J101	Toshiba	N-CHANNEL	SINGLE	NO	30 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	30 W	150 Cel	SILICON	600 V		20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED	TO-220AB	e0			400 ns
GT8G132	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2200 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1100 ns
GT8G121(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2100 ns	3	IN-LINE			150 Cel	SILICON	400 V					SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					2500 ns
MG8Q6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		8 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	6	500 ns		17	FLANGE MOUNT			150 Cel	SILICON	1200 V					UPPER	R-XUFM-X17			Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
GT8Q102(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	500 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	1200 V		20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0
GT8G121(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2100 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					2500 ns
GT8G101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE				SILICON	400 V					SINGLE	R-PSIP-T3			Not Qualified						1100 ns
GT8N101	Toshiba	N-CHANNEL	SINGLE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		600 ns	3	FLANGE MOUNT				SILICON	1000 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING					200 ns
MG8N6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1000 V									Not Qualified
MUBW8-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO		8 A	PLASTIC/EPOXY	POWER CONTROL			PIN/PEG	RECTANGULAR	7			25	FLANGE MOUNT				SILICON	600 V				PURE TIN	UPPER	R-PUFM-P25			Not Qualified	3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
IXGP4N100	Littelfuse	N-CHANNEL	SINGLE	NO		8 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1220 ns	3	FLANGE MOUNT				SILICON	1000 V				MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			45 ns
IXGA4N100	Littelfuse	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		1220 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V	-55 Cel			Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	45 ns
SGR5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGP5N60RUF	Samsung	N-CHANNEL	SINGLE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V					SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				27 ns
SGP5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V					SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				27 ns
SGW5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGW5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGL5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V					SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264				27 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.