188 W Insulated Gate Bipolar Transistors (IGBT) 18

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
NXH80T120L3Q0P3G	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	188 W	75 A	UNSPECIFIED	POWER CONTROL	2.4 V	UNSPECIFIED	RECTANGULAR	4	750 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	98 ns
NXH80T120L3Q0S3TG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	188 W	75 A	UNSPECIFIED	POWER CONTROL	2.4 V	UNSPECIFIED	RECTANGULAR	4	750 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	98 ns
NXH80T120L3Q0S3G	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	188 W	75 A	UNSPECIFIED	POWER CONTROL	2.4 V	UNSPECIFIED	RECTANGULAR	4	750 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	98 ns
IKP30N65H5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	224 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-220AB	e3			28 ns
AIGB30N65H5	Infineon Technologies	N-Channel			188 W	55 A			2.1 V				215 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V										30 ns
IKB30N65EH5ATMA1	Infineon Technologies	N-Channel			188 W	55 A			2.1 V				187 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN			1			e3			36 ns
IGP30N65H5	Infineon Technologies	N-CHANNEL	SINGLE	NO	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	224 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-220AB	e3			28 ns
AIGB30N65F5	Infineon Technologies	N-Channel			188 W	55 A			2.1 V				215 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V										30 ns
AIKB30N65DH5	Infineon Technologies	N-Channel			188 W	55 A			2.1 V				215 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V										30 ns
IKB30N65EH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	200 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-263AB	e3			52 ns
AIKB30N65DF5	Infineon Technologies	N-Channel			188 W	55 A			2.1 V				215 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V										30 ns
IGP30N65F5	Infineon Technologies	N-CHANNEL	SINGLE	NO	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	206 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-220AB	e3			28 ns
IKP30N65F5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	206 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-220AB	e3			28 ns
IKB30N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	62 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1	204 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-263AB	e3			30 ns
IKW30N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	62 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1	204 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3			30 ns
IKW30N65H5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	55 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	246 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3			TO-247	e3			31 ns
IKW30N65ET7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.65 V	THROUGH-HOLE	RECTANGULAR	1	256 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3			32 ns
MIXA50PM650TMI	Littelfuse				188 W	75 A			1.8 V			1				Insulated Gate BIP Transistors	175 Cel		650 V		20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.