298 W Insulated Gate Bipolar Transistors (IGBT) 18

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
HGT1S10N120BNST	Onsemi	N-CHANNEL	SINGLE	YES	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	GULL WING	RECTANGULAR	1	200 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	32 ns
HGTP10N120BN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	330 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			32 ns
HGT1S10N120BNS	Onsemi	N-CHANNEL	SINGLE	YES	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	GULL WING	RECTANGULAR	1	200 ns	330 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	32 ns
FGH60N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	120 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	80 ns	204 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	83 ns
HGTG11N120CND_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
HGT1N40N60A4D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	110 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1	95 ns	240 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V		UPPER	R-PUFM-X4	1	ISOLATED	Not Qualified	LOW CONDUCTION LOSS					47 ns
HGT1S11N120CNS	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
FGA60N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	120 A	UNSPECIFIED	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	80 ns	204 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-XSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			83 ns
HGT1S11N120CNS9A	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
FGH60N60UFDTU-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	218 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3			83 ns	AEC-Q101
HGTP11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	42 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-220AB				33 ns
HGTG10N120BN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	330 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns			SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247				32 ns
HGTG11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-247				33 ns
NGTB60N60SWG	Onsemi	N-CHANNEL		NO	298 W	120 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
FGA20N120FTDTU	Onsemi	N-CHANNEL		NO	298 W	40 A								320 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			25 V		7.5 V	MATTE TIN								e3
RJH60M6DPQ-E0#T2	Renesas Electronics	N-CHANNEL		NO	298 W	80 A												Insulated Gate BIP Transistors	150 Cel		600 V			30 V												NOT SPECIFIED	NOT SPECIFIED
RJH60F6DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	85 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						65 ns
RJH60F6DPK-00#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	85 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						65 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.