40 W Insulated Gate Bipolar Transistors (IGBT) 24

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FGD3N60LSDTM-T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		1.5 V	GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	25 V	5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-252AA				85 ns
FGD3N60LSDTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3	30	260	85 ns
STGF20NB60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W	24 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		3600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			162 ns
NGTB10N60FG	Onsemi	N-CHANNEL		NO	40 W	20 A												Insulated Gate BIP Transistors		150 Cel		600 V		20 V	6.5 V	MATTE TIN								e3
STGF30NC60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W	22 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		555 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	30 ns
STGF35HF60W	STMicroelectronics	N-CHANNEL		NO	40 W	19 A												Insulated Gate BIP Transistors		150 Cel		600 V		20 V	5.75 V
STGF100N30	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	330 V		20 V	5.5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IKA10N65ET6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	15 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		152 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-40 Cel	20 V	6.4 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				48 ns
MIG10J805	Toshiba			NO	40 W	10 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V			DUAL	R-XDIP-T20			Not Qualified
MIG10J855E	Toshiba				40 W	10 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MP6754	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	40 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	6	350 ns		11	FLANGE MOUNT	Insulated Gate BIP Transistors	40 W	150 Cel	SILICON	600 V		20 V	9 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11		ISOLATED	Not Qualified	HIGH SPEED		e0
MIG10J855	Toshiba			NO	40 W	10 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V			DUAL	R-XDIP-T20			Not Qualified
MP6759	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	40 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	6		400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11		ISOLATED	Not Qualified			e0			400 ns
MIG10J805E	Toshiba				40 W	10 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
RJH60D0DPM-00#T1	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	55 ns
RJH60D0DPM-00-T1	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	55 ns
RJH60V3BDPP-M0#T2	Renesas Electronics	N-CHANNEL		NO	40 W	35 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V											NOT SPECIFIED	NOT SPECIFIED
RJP30H1DPD-00-J2	Renesas Electronics	N-CHANNEL		YES	40 W	30 A												Insulated Gate BIP Transistors		150 Cel		360 V		30 V	5 V
RJP60F0DPM-00#T1	Renesas Electronics	N-CHANNEL		NO	40 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V											NOT SPECIFIED	NOT SPECIFIED
RJP60V0DPM-00#T1	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	7.5 V		SINGLE	R-PSFM-T3		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	85 ns
RJP60D0DPM-00-T1	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						55 ns
RJP60D0DPM-00#T1	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						55 ns
RJP30H1DPD-00#J2	Renesas Electronics	N-CHANNEL		YES	40 W	30 A												Insulated Gate BIP Transistors		150 Cel		360 V		30 V	5 V
VWI6-12P1	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	40 W	6 A	UNSPECIFIED	POWER CONTROL		4.6 V	UNSPECIFIED	RECTANGULAR	6		380 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X19		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	50 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.