YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC41T120R3EX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC05T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.4 A

UNSPECIFIED

MOTOR CONTROL

22 ns

NO LEAD

SQUARE

1

84 ns

307 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

38 ns

SIGC57T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

6

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

UPPER

R-XUUC-N6

Not Qualified

e3

140 ns

SIGC61T60NCX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

205 ns

4

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N4

90 ns

SIGC121T120R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

103 A

UNSPECIFIED

POWER CONTROL

100 ns

NO LEAD

SQUARE

1

100 ns

520 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC08T65E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.87 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC18T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

MOTOR CONTROL

46 ns

NO LEAD

SQUARE

1

65 ns

279 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

62 ns

SIGC04T65E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.87 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC11T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

130 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

28 ns

SIGC25T120CS2X1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC128T170R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC07T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

UNSPECIFIED

MOTOR CONTROL

24 ns

NO LEAD

SQUARE

1

65 ns

274 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

40 ns

SIGC42T120CS2X1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC158T120R3YX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

830 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N

395 ns

SIGC41T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

SIGC16T120CLX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC07T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

20 ns

NO LEAD

SQUARE

1

84 ns

318 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

1

Not Qualified

260

41 ns

SIGC28T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN LEAD

UPPER

R-XUUC-N3

Not Qualified

e0

SIGC20T120LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

640 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

120 ns

SIGC42T120CS2X1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N3

SGB30N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

78 ns

SIGC18T60UNX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

100 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23.5 ns

SIGC76T65R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.2 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC06T120CSX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

2 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

321 ns

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

39 ns

IRG4CC20FB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

e0

AUIRG4BC30USTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

33 ns

IRGR4607DTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

95 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

51 ns

SKB06N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

41 ns

IKD03N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

18 ns

IRG4CC10KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG7S313UTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

276 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

25 ns

IRG4CH40UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

1200 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG7SC28UTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

171 W

60 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

4.7 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

TO-263AB

e3

65 ns

IRG4BC20SD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

19 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1780 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

30

225

99 ns

IRG4RC10UTRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

ULTRA FAST

TO-252AA

30

260

32 ns

IRG4CC20UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

e0

IKD03N60RFA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

5 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

18 ns

AEC-Q101

IRG4RC10UTR

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-252AA

e3

32 ns

IGB50N60T

Infineon Technologies

N-CHANNEL

SINGLE

YES

333 W

100 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

396 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

260

60 ns

IRG4BC20W-STRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

96 ns

300 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

36 ns

IRG4CC40FB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

FAST SPEED

e0

SGD04N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 W

9.4 A

PLASTIC/EPOXY

POWER CONTROL

22 ns

GULL WING

RECTANGULAR

1

84 ns

368 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

260

38 ns

IRG4CC40RB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG7RC07SDTRPBF

Infineon Technologies

N-CHANNEL

YES

39 W

16 A

30 ns

670 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5.5 V

IRGR4610DPBF

Infineon Technologies

N-CHANNEL

YES

77 W

16 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

IRG4CH40KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

1200 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IKB03N120H2-E3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

16.1 ns

IRG4BC20KD-STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

380 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

e3

NOT SPECIFIED

NOT SPECIFIED

88 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.