YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGD6NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e3

17.3 ns

STGB14NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-263AB

e3

30

245

31.5 ns

HGTD1N120BNS9A

Onsemi

N-CHANNEL

SINGLE

YES

60 W

5.3 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

2.9 V

GULL WING

RECTANGULAR

1

370 ns

333 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

32 ns

-55 Cel

20 V

458 ns

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

24 ns

SKB02N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

STGD25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

HGT1S10N120BNST

Onsemi

N-CHANNEL

SINGLE

YES

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

GULL WING

RECTANGULAR

1

200 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

32 ns

FGD5T120SH

Onsemi

N-CHANNEL

SINGLE

YES

69 W

10 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

3.6 V

GULL WING

RECTANGULAR

1

159.6 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

25 V

4.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

245

44.8 ns

SGD02N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

354 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

34 ns

SGB02N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

IRGS14C40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

LOW SATURATION VOLTAGE

TO-263AB

e3

30

260

3700 ns

IXGA20N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

e3

10

260

66 ns

IRG4BC30FD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

69 ns

STGD5NB120SZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

55 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

14100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

850 ns

FGD3040G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23.2 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

14 V

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

FGD3040G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

450 V

11000 ns

-55 Cel

10 V

25000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

2800 ns

AEC-Q101

FGD3040G2_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23.2 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

14 V

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

FGD3040G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.85 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

2800 ns

AEC-Q101

IXGA20N120A3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

66 ns

STGD3HF60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

13 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252

e3

30

260

IGB50N65S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

215 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

51 ns

IGB50N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

396 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

60 ns

IKD04N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

342 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252

e3

20 ns

STGD20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

STGB3NC120HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

680 ns

2

SMALL OUTLINE

SILICON

1200 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

30

245

18.5 ns

STGB25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

IKD10N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

24 ns

ISL9V3040D3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.6 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

450 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

2800 ns

STGB10NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

ISOLATED

Not Qualified

e3

30

245

23 ns

STGB20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

HGT1S10N120BNS

Onsemi

N-CHANNEL

SINGLE

YES

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

GULL WING

RECTANGULAR

1

200 ns

330 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

32 ns

IRG4BC30KD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

120 ns

370 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

30

260

100 ns

IKD04N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

18 ns

IKD06N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

22 ns

IRG4BC20UD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

55 ns

SGD02N120BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

TO-252AA

40 ns

IKD15N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

26 ns

STGB30H60DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

FGD3N60LSDTM-T

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

1.5 V

GULL WING

RECTANGULAR

1

1420 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

25 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252AA

85 ns

FGD4536TM-F065

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.8 V

GULL WING

RECTANGULAR

1

292 ns

2

SMALL OUTLINE

150 Cel

SILICON

360 V

-55 Cel

30 V

4 V

DUAL

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

26 ns

FGD3N60LSDTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

1420 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

30

260

85 ns

FGD4536TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.8 V

GULL WING

RECTANGULAR

1

292 ns

2

SMALL OUTLINE

150 Cel

SILICON

360 V

-55 Cel

30 V

4 V

Matte Tin (Sn) - annealed

DUAL

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

26 ns

IKD06N60RFATMA1

Infineon Technologies

N-CHANNEL

YES

100 W

12 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

5.7 V

TIN

1

e3

IGB50N60TXT

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

396 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

60 ns

IRG4BC30W-SPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

100 ns

300 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

30

260

41 ns

IXGT6N170AHV

Littelfuse

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

7 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

91 ns

IXYT25N250CHV

Littelfuse

N-CHANNEL

SINGLE

YES

937 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4 V

GULL WING

RECTANGULAR

1

775 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

51 ns

SGB15N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

198 W

30 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

26 ns

683 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

68 ns

IKD04N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

18 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.