Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
56 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
222 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-252AA |
e3 |
17.3 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
80 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
340 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
ULTRA FAST |
TO-263AB |
e3 |
30 |
245 |
31.5 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
60 W |
5.3 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
15 ns |
2.9 V |
GULL WING |
RECTANGULAR |
1 |
370 ns |
333 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
32 ns |
-55 Cel |
20 V |
458 ns |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
AVALANCHE RATED |
TO-252AA |
e3 |
30 |
260 |
24 ns |
||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
375 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
40 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
298 W |
35 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
15 ns |
4.2 V |
GULL WING |
RECTANGULAR |
1 |
200 ns |
330 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
450 ns |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
30 |
260 |
32 ns |
||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
69 W |
10 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
3.6 V |
GULL WING |
RECTANGULAR |
1 |
159.6 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
25 V |
4.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
245 |
44.8 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
354 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-252AA |
e3 |
34 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
375 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
40 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
30 |
260 |
3700 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
180 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1530 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AA |
e3 |
10 |
260 |
66 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
620 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
69 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
55 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
14100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
850 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
450 V |
11000 ns |
-55 Cel |
10 V |
25000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
|||||||||||||
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
180 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1530 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AA |
66 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
13 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
GULL WING |
RECTANGULAR |
1 |
215 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
51 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
396 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
60 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
342 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-252 |
e3 |
20 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
680 ns |
2 |
SMALL OUTLINE |
SILICON |
1200 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
30 |
245 |
18.5 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
428 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
24 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
242 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
ISOLATED |
Not Qualified |
e3 |
30 |
245 |
23 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
298 W |
35 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
15 ns |
4.2 V |
GULL WING |
RECTANGULAR |
1 |
200 ns |
330 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
450 ns |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
30 |
260 |
32 ns |
|||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
28 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
120 ns |
370 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
30 |
260 |
100 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
216 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
18 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
22 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
13 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
170 ns |
320 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
55 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
375 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSSO-G2 |
3 |
COLLECTOR |
Not Qualified |
TO-252AA |
40 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
430 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252 |
e3 |
26 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
223 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
40 W |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
1.5 V |
GULL WING |
RECTANGULAR |
1 |
1420 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
25 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252AA |
85 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
292 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
360 V |
-55 Cel |
30 V |
4 V |
DUAL |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
26 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
40 W |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
1420 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
30 |
260 |
85 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
292 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
360 V |
-55 Cel |
30 V |
4 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
26 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
100 W |
12 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
396 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
100 ns |
300 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
30 |
260 |
41 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
7 V |
GULL WING |
RECTANGULAR |
1 |
271 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-268AA |
e3 |
10 |
260 |
91 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
937 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
GULL WING |
RECTANGULAR |
1 |
775 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
2500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
51 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
198 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
24 ns |
GULL WING |
RECTANGULAR |
1 |
26 ns |
683 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
245 |
68 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
216 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
-40 Cel |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
18 ns |
AEC-Q101 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.