YES Insulated Gate Bipolar Transistors (IGBT) 1,895

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBT14N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		1910 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V		-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-268AA				810 ns
IXBT32N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		795 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	573 ns
IXGA48N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	GULL WING	RECTANGULAR	1		925 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	54 ns
IXGT6N170	Littelfuse	N-CHANNEL	SINGLE	YES	75 W	12 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	85 ns
IXBT20N360HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	430 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	GULL WING	RECTANGULAR	1		1285 ns	2	SMALL OUTLINE		150 Cel	SILICON	3600 V		-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				922 ns
IXBT2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	310 ns
IXBT42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	42 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1		308 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	33 ns
IXBT6N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	12 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	104 ns
IXGA20N120	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1	700 ns	780 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V		-55 Cel	20 V	1500 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	48 ns
IXGT10N170	Littelfuse	N-CHANNEL	SINGLE	YES	110 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	300 ns
IXYT80N90C3	Littelfuse	N-CHANNEL	SINGLE	YES	830 W	165 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		201 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	134 ns
IXYY8N90C3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		238 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V		-55 Cel	20 V		6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				39 ns
MMG05N60DT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		301 ns	4	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			15 V		6 V	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING	TO-261	e0
MMIX4B20N300	Littelfuse	N-CHANNEL	COMPLEX	YES		34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	4		695 ns	9	SMALL OUTLINE			SILICON	3000 V							DUAL	R-PDSO-G9		ISOLATED							608 ns
RGT16NS65DGTL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		16 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		170 ns	2	SMALL OUTLINE			SILICON	650 V						TIN	SINGLE	R-PSSO-G2		COLLECTOR				e3			27 ns
RGT50NS65DGTL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		48 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		210 ns	2	SMALL OUTLINE			SILICON	650 V						TIN	SINGLE	R-PSSO-G2		COLLECTOR				e3			65 ns
APT40GR120S	Microchip Technology	N-CHANNEL		YES	500 W	88 A												Insulated Gate BIP Transistors	150 Cel		1200 V			30 V		6 V
AOD5B60D	Alpha & Omega Semiconductor	N-CHANNEL		YES	54.4 W	10 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V
FGB3040G2-F085	Onsemi	N-CHANNEL		YES	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			12 V		2.2 V	Matte Tin (Sn) - annealed			1					e3	30	260
FGB3040G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	166 W	26.9 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns	1.75 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	3000 ns	AEC-Q101
FGB3040G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			12 V		2.2 V				1							260
FGB40T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		80 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		51 ns	2	SMALL OUTLINE			SILICON	650 V		-55 Cel				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	49 ns	AEC-Q101
FGB40T65SPD_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	267 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	GULL WING	RECTANGULAR	1		51 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		RC-IGBT	TO-263AB	e3			49 ns	AEC-Q101
FGD3245G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-55 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1				TO-252AA	e3	30	260	3500 ns	AEC-Q101
IGB30N60T	Infineon Technologies	N-CHANNEL	SINGLE	YES	187 W	60 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		382 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	HIGH SPEED	TO-263AB	e3		245	50 ns
IKD10N60RFATMA1	Infineon Technologies	N-CHANNEL		YES	150 W	20 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		5.7 V	TIN			1					e3
ISL9V5036S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	200 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1		13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	420 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
IXGA30N120B3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB				53 ns
IXYA20N120B4HV	Littelfuse	N-CHANNEL	SINGLE	YES	375 W	76 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		440 ns	2	SMALL OUTLINE		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	48 ns
NVG800A75L4DSC	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE	YES		800 A	UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	2		855 ns	15	MICROELECTRONIC ASSEMBLY		175 Cel	SILICON	750 V		-40 Cel	20 V		6.2 V		UNSPECIFIED	R-XXMA-X15									347 ns
SGD02N120	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		GULL WING	RECTANGULAR	1	61 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified		TO-252AA	e3		260	40 ns
SIGC54T60R3EX1SA3	Infineon Technologies	N-CHANNEL	SINGLE	YES		100 A	UNSPECIFIED	POWER CONTROL			NO LEAD	RECTANGULAR	1			10	UNCASED CHIP		175 Cel	SILICON	600 V							UPPER	R-XUUC-N10							NOT SPECIFIED	NOT SPECIFIED
STGB6NC60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		222 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified			e3	30	245	17.3 ns
PCGA200T65NF8	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.9 V	NO LEAD	SQUARE	1		332 ns	3	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED	300 ns	AEC-Q101
HGT1S11N120CNS	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
AFGB30T65SQDN-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263	e3	30	260	33.6 ns	AEC-Q101
NGD15N41ACLT4G	Onsemi	N-CHANNEL		YES	107 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V			15 V		1.9 V	MATTE TIN			1					e3	30	260
PCFG60T120SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.95 V	NO LEAD	SQUARE	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N2				HIGH SPEED SWITCHING			NOT SPECIFIED	NOT SPECIFIED
NGB15N41CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5700 ns
PCFG60T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1				UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N
NGTD17T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
PCFG40T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1			2	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
NGTD14T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
MGC15N43CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	UNSPECIFIED	AUTOMOTIVE IGNITION			NO LEAD	UNSPECIFIED	1		21000 ns		UNCASED CHIP		175 Cel	SILICON	460 V						TIN LEAD	UPPER	X-XUUC-N			Not Qualified			e0			5000 ns
NGTD13T120F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2
TIG064E8-TL-H	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			4 V		.9 V	TIN BISMUTH			1					e6	30	260
TIG065E8	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE			SILICON	400 V							DUAL	R-PDSO-F8
NGB8202ANTF4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns	1.9 V	GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR					NOT SPECIFIED	NOT SPECIFIED	6500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.