Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
208 W |
40 A |
PLASTIC/EPOXY |
SWITCHING |
21 ns |
2.85 V |
GULL WING |
RECTANGULAR |
1 |
43 ns |
123 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
37 ns |
-55 Cel |
20 V |
169 ns |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
28 ns |
AEC-Q101 |
|||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
15 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
UNSPECIFIED |
1 |
19000 ns |
UNCASED CHIP |
175 Cel |
SILICON |
380 V |
TIN LEAD |
UPPER |
X-XUUC-N |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
6000 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
18 V |
1.9 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
5200 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
20 A |
8000 ns |
14000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
15 V |
2.1 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
e3 |
6500 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
88 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
6500 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
18 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
18 V |
1.9 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
5200 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
290 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
MATTE TIN |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
e3 |
47 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
95 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
265 ns |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
33 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.9 V |
NO LEAD |
SQUARE |
1 |
332 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
6500 ns |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
8 V |
1 V |
||||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
301 ns |
4 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
15 V |
6 V |
TIN LEAD |
DUAL |
R-PDSO-G4 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-261A |
e0 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
187 W |
44 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7040 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2350 ns |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
299 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
47 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1 V |
||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
SWITCHING |
1.95 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
EMITTER |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
175 ns |
350 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
470 ns |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
46 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
5700 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.75 V |
NO LEAD |
SQUARE |
1 |
424 ns |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
7.2 V |
UPPER |
S-XUUC-N2 |
468 ns |
AEC-Q101 |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
18500 ns |
2 |
SMALL OUTLINE |
SILICON |
390 V |
Tin/Lead (Sn80Pb20) |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
6500 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
85 ns |
205 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
17 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
15 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
UNSPECIFIED |
1 |
19000 ns |
UNCASED CHIP |
175 Cel |
SILICON |
440 V |
TIN LEAD |
UPPER |
X-XUUC-N |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
6000 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
290 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
47 ns |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
4 V |
.9 V |
||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
NO LEAD |
RECTANGULAR |
1 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.3 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
235 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
136 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
20500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
22 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
235 |
6000 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
100 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252AA |
17.5 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
60 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
275 ns |
490 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
675 ns |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
RC-IGBT |
TO-252AA |
20 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2700 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
365 V |
15 V |
2 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
2450 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
28 ns |
GULL WING |
RECTANGULAR |
1 |
17 ns |
132 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
37 ns |
|||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
400 V |
15 V |
2.1 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
136 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
2.1 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1 V |
Tin/Bismuth (Sn/Bi) |
1 |
e6 |
||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
14000 ns |
GULL WING |
RECTANGULAR |
1 |
7000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
435 V |
15 V |
2.3 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
11000 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
5700 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
164 W |
45 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
28 ns |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
210 ns |
388 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
60 ns |
-55 Cel |
20 V |
660 ns |
6.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
52 ns |
||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.5 V |
NO LEAD |
RECTANGULAR |
1 |
1100 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N3 |
120 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.