YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGD3245G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3500 ns	AEC-Q101
FGD3050G2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2500 ns
FGD3440G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	166 W	26.9 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7 ns	1.75 V	GULL WING	RECTANGULAR	1	15 ns	7.6 ns	2	SMALL OUTLINE		175 Cel	SILICON	40 V	11 ns	-40 Cel	14 V	26 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	3 ns
ISL9V3036D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2800 ns
NGTB05N60R2DT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	139 ns
ISL9V3040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V3036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	FLANGE MOUNT		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2800 ns
FGD3050G2_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2500 ns
FGB20N60SF	Onsemi	N-CHANNEL	SINGLE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
FGD3325G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	41 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	7300 ns	2	SMALL OUTLINE		175 Cel	SILICON	240 V	11000 ns	-55 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2000 ns	AEC-Q101
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.9 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
ISL9V3040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
ISL9V5045S3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	480 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-263AB	e3	30	260	2800 ns	AEC-Q101
ISL9V3036D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
FGB20N60SFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
ISL9V2040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2780 ns
STG75M120F3D7	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.7 V	NO LEAD	RECTANGULAR	1		397 ns	3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									217 ns
STG40M120F3D7	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.8 V	NO LEAD	RECTANGULAR	1		390 ns	3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									53 ns
STG20M65F2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES		20 A	UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	RECTANGULAR	1		252 ns	2	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N2									39.6 ns
STG35M120F3D8	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	RECTANGULAR	1		142.84 ns	3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									145 ns
STG75M120F3D8	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.7 V	NO LEAD	RECTANGULAR	1		397 ns	3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									217 ns
STG15M65F2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES		15 A	UNSPECIFIED	POWER CONTROL		2.2 V	NO LEAD	SQUARE	1		265 ns	2	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		UPPER	S-XUUC-N2									34 ns
STGA30M65DF2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		60 A	UNSPECIFIED	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1		225 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				45 ns
STG25M120F3D7	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	RECTANGULAR	1		395 ns	2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N2									45 ns
STG30M65F2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES		30 A	UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	RECTANGULAR	1		310 ns	2	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED	47 ns
STGSB200M65DF2AG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	714 W	216 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	GULL WING	RECTANGULAR	1		412.6 ns	9	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		DUAL	R-PDSO-G9		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	193.6 ns	AEC-Q101; UL RECOGNIZED
STG25H120F2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES		25 A	UNSPECIFIED	POWER CONTROL		2.6 V	NO LEAD	RECTANGULAR	1		236 ns	3	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									40.5 ns
STG50M65F2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.5 V	NO LEAD	RECTANGULAR	1		315 ns	3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N3									66 ns
STG8M120F3D7	STMicroelectronics	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.4 V	NO LEAD	SQUARE	1		356 ns	2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		UPPER	S-XUUC-N2									28.8 ns
STG200M65F2D8AG	STMicroelectronics	N-CHANNEL	SINGLE	YES		200 A	UNSPECIFIED	POWER CONTROL		2.3 V	NO LEAD	RECTANGULAR	1		168 ns	9	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		7 V		UPPER	R-XUUC-N9									205 ns	AEC-Q101
STG40H65FB2D7	STMicroelectronics	N-CHANNEL	SINGLE	YES		40 A	UNSPECIFIED	POWER CONTROL		2 V	NO LEAD	RECTANGULAR	1		148.5 ns	2	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		UPPER	R-XUUC-N2									71.8 ns
STGD3NB60M	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V							SINGLE	R-PSSO-G2			Not Qualified		TO-252AA				14 ns
STGB19NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	35 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		144 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified			e3			24 ns
STGB8NC60K	STMicroelectronics	N-CHANNEL	SINGLE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						MATTE TIN	DUAL	R-PDSO-G2	1		Not Qualified			e3			23 ns
STGB30H60DLLFBAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	260 W	60 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.15 V	GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V		-55 Cel	20 V		2.5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
STGD7NB60MT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		670 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			19 ns
STGB20NB41LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	200 W	40 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		16100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	382 V					2.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	245	1220 ns
STGD7NB60FT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			23 ns
STGB25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE		175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				4560 ns	AEC-Q101
STGD8NC60KTRL	STMicroelectronics	N-CHANNEL	SINGLE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						MATTE TIN	DUAL	R-PDSO-G2	1		Not Qualified			e3			23 ns
STGB18N40LZT4TRL	STMicroelectronics	N-CHANNEL	SINGLE	YES		30 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		24800 ns	2	SMALL OUTLINE		175 Cel	SILICON							MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified			e3			6900 ns
STGD7NB60F	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			23 ns
STGB30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		184 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				27.5 ns
STGD6NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		222 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V							SINGLE	R-PSSO-G2			Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED	17.3 ns
STGD18N40LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	125 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		22200 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	420 V			16 V		2.3 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-252	e3	30	260	4450 ns
STGD14NC60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	80 W	25 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		340 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Matte Tin (Sn)	DUAL	R-PDSO-G2	1		Not Qualified			e3			31.5 ns
STGD7NC60H	STMicroelectronics	N-CHANNEL	SINGLE	YES		25 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		221 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V							SINGLE	R-PSSO-G2			Not Qualified		TO-252AA		NOT SPECIFIED	NOT SPECIFIED	25.5 ns
STGD7NB60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3			63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.