YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NGTD23T120F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.2 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
TIG052TS-TL-E	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		1 V	Tin/Bismuth (Sn/Bi)			1					e6
NGD18N40CLB	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			5200 ns
PCGA300T65DF8M1	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.55 V	NO LEAD	SQUARE	1		473 ns	9	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V		UPPER	S-XUUC-N9							NOT SPECIFIED	NOT SPECIFIED	223 ns	AEC-Q101
HGT1S11N120CNS9A	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
NGB8204ANT4G	Onsemi	N-CHANNEL		YES	115 W	18 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		1.9 V	MATTE TIN								e3
PCGA160T65NF8	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.85 V	NO LEAD	RECTANGULAR	1		308 ns		UNCASED CHIP		150 Cel	SILICON	650 V		-40 Cel	20 V		6.3 V		UPPER	R-XXUC-N							NOT SPECIFIED	NOT SPECIFIED	288 ns	AEC-Q101
NGB8202NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
MGP15N43CLT4	Onsemi	N-CHANNEL		YES	136 W	15 A												Insulated Gate BIP Transistors	175 Cel		400 V					2.1 V
NGTD21T65F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
NGB8245NT4G	Onsemi	N-CHANNEL		YES	150 W	20 A			6000 ns					11000 ns				Insulated Gate BIP Transistors	175 Cel		490 V			15 V		2.3 V	MATTE TIN								e3
AFGB40T65SPD-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	267 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	GULL WING	RECTANGULAR	1		51 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	30	260	49 ns	AEC-Q101
NVG500A75L4DSF2	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		500 A	UNSPECIFIED	POWER CONTROL		1.45 V	UNSPECIFIED	RECTANGULAR	2		913 ns	13	MICROELECTRONIC ASSEMBLY		175 Cel	SILICON	750 V		-40 Cel	20 V		6.5 V		UNSPECIFIED	R-XXMA-X13									235 ns	AEC-Q101
HGTD7N60C3S9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	RC-IGBT	TO-252AA	e3	30	260	20 ns
NGTD13T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2.2 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3
MGB15N40CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V							SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING			NOT SPECIFIED	NOT SPECIFIED	6000 ns
NGB8202ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR				e3			6500 ns
PCGA300T65DF8	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.55 V	NO LEAD	SQUARE	1		638 ns	9	UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.6 V		UPPER	S-XUUC-N9							NOT SPECIFIED	NOT SPECIFIED	225 ns	AEC-Q101
HGT1S7N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
FGB7N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	89 ns	146.8 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	10.3 ns
NGB8206ANSL3G	Onsemi	N-CHANNEL		YES	150 W	20 A			8000 ns					14000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			15 V		2.1 V	MATTE TIN								e3
MGB19N35CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	165 W	19 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	22000 ns	25000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V			22 V		2 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
NGB8206NTF4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V						TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			6500 ns
SGR6N60UF	Onsemi	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	GULL WING	RECTANGULAR	1	150 ns	202 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS, HIGH SPEED SWITCHING					54 ns
TIG062E8-TL-H	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		.9 V	Tin/Bismuth (Sn/Bi)			1					e6
NGD15N41CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5700 ns
FGB5N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	202 ns	151.6 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	7.5 ns
NGB8206NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
NGB8204NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5200 ns
TIG062E8	Onsemi	N-CHANNEL		YES														Insulated Gate BIP Transistors	150 Cel		400 V			6 V		.9 V
HGT1S12N60C3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-263AB				48 ns
NGB8207ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		14700 ns	2	SMALL OUTLINE		175 Cel	SILICON	365 V						MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			2450 ns
FGD2736G3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE		175 Cel	SILICON	360 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3900 ns
NGD18N45CLBT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	9000 ns		GULL WING	RECTANGULAR	1	7000 ns	5400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	500 V			18 V		1.9 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR				e3	30	260	2920 ns
NGD18N40ACLBT4G	Onsemi	N-CHANNEL		YES	115 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		2.1 V	MATTE TIN			1					e3	30	260
NGD8205ANT4G	Onsemi	N-CHANNEL		YES	125 W	20 A			8000 ns					14000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			15 V		2.1 V	MATTE TIN			1					e3	30	260
NGTD21T65F2SWK	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.9 V	NO LEAD	SQUARE	1			3	UNCASED CHIP		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	S-XUUC-N3							NOT SPECIFIED	NOT SPECIFIED
HGT1S3N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17.5 ns
NGD8201BNT4G	Onsemi	N-CHANNEL		YES	115 W	15 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		430 V			18 V		1.8 V	Matte Tin (Sn) - annealed			1					e3	30	260
NGTD30T120F2WP	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		2.4 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED
NGB8204NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
NVG450A120L5DSC	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		450 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	2		1173 ns	15	MICROELECTRONIC ASSEMBLY		150 Cel	SILICON	1200 V		-40 Cel	20 V		7.6 V	Matte Tin (Sn) - annealed	UNSPECIFIED	R-XXMA-X15						e3			187 ns
TIG065E8TL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE			SILICON	400 V							DUAL	R-PDSO-F8
FGD2736G3-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	37.5 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE		175 Cel	SILICON	330 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1					e3	30	260	3900 ns	AEC-Q101
HGT1S12N60C3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-263AB				48 ns
NGB8202NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
PCFG75T65SQF	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.1 V	NO LEAD	SQUARE	1				UNCASED CHIP		175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V		UPPER	S-XUUC-N							NOT SPECIFIED	NOT SPECIFIED
MMG05N60D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		301 ns	4	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			15 V		6 V	TIN LEAD	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH SPEED	TO-261A	e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.