YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGB4M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

296 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

19.6 ns

STGD3NB60S

STMicroelectronics

N-CHANNEL

SINGLE

YES

45 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

4800 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252

e3

710 ns

STGB3NB60MDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

859 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

14 ns

STGD3NC60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

50 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

STGD3NB60SD-1

STMicroelectronics

N-CHANNEL

YES

48 W

3 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

4.5 V

MATTE TIN

1

e3

30

260

STGB20V60DF

STMicroelectronics

N-CHANNEL

YES

40 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

MATTE TIN

1

e3

245

STGD18N40LZT4TRL

STMicroelectronics

N-CHANNEL

SINGLE

YES

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

24800 ns

2

SMALL OUTLINE

175 Cel

SILICON

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

6900 ns

STGB14NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

31.5 ns

STGB19NC60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

50 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

535 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

245

23.5 ns

STGB12NB60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

461 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

39.5 ns

STGB19NC60WT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

130 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

204 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

33 ns

STGB6NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

17.3 ns

STGD3NB60SD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

4800 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-252

e3

275 ns

STGB3NB60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

Not Qualified

e3

19 ns

STGB20NB37LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ESD PROTECTED

TO-263AB

e3

2900 ns

STGB10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

260 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

STGD19N40LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

25 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

175 Cel

SILICON

425 V

-55 Cel

16 V

2.6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

4450 ns

AEC-Q101

STGB10NC60HDTRL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

247 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

19 ns

STGB30NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

185 W

60 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

290 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGB7NB60MD

STMicroelectronics

N-CHANNEL

YES

80 W

7 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

Matte Tin (Sn)

e3

STGB30H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

GULL WING

RECTANGULAR

1

234 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

STGB7NB60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

63 ns

STGD7NB60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

45 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

21 ns

STGB7NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

221 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

25.5 ns

STGB35N35LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

176 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

37000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

380 V

12 V

2.3 V

MATTE TIN

DUAL

R-PDSO-G2

1

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AA

e3

30

245

7600 ns

STGB7NB60MDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

670 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

e0

19 ns

STGB7NB60FDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

854 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

e0

23 ns

STGB14NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AA

NOT SPECIFIED

NOT SPECIFIED

31.5 ns

STGB40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

YES

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGB19NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

272 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

32 ns

STGB35N35LZT4TRL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

37000 ns

2

SMALL OUTLINE

175 Cel

SILICON

380 V

DUAL

R-PDSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

7600 ns

STGB10NC60KD

STMicroelectronics

N-CHANNEL

YES

60 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

7 V

Tin/Lead (Sn/Pb)

e0

STGB10NB60S

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

1160 ns

STGB10NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

29 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

3100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

1160 ns

STGB20NB37LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

200 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

2 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

2900 ns

STGBL6NC60DIT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

122 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

10.5 ns

STGB5NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

Not Qualified

STGB3NB60SD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

4800 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-263

e3

275 ns

STGB3HF60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

7.5 A

PLASTIC/EPOXY

POWER CONTROL

2.95 V

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.75 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

STGB20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

178 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

26 ns

STGD3NB60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

35 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

168 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e3

46 ns

STGD25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

4560 ns

AEC-Q101

STGD6NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

17.3 ns

STGB50H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

41 ns

STGD3NB60M

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

859 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

14 ns

BUK866-400IZ

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK866-400IZ,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

150 Cel

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK866-400IZ/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.