YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MMIX1G75N250	Littelfuse	N-CHANNEL	SINGLE	YES	430 W	110 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		GULL WING	RECTANGULAR	1		725 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V	20 V	5 V		DUAL	R-PDSO-G21		ISOLATED							280 ns
IXGT32N100A3	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		GULL WING	RECTANGULAR	1		1170 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	75 ns	UL RECOGNIZED
IXGT25N250HV	Littelfuse	N-CHANNEL		YES	250 W	60 A											Insulated Gate BIP Transistors	150 Cel		2500 V	20 V	5 V	MATTE TIN			1					e3	10	260
IXGT20N120	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		1250 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	57 ns
IXBT45N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		2460 ns	2	SMALL OUTLINE			SILICON	1700 V			PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				83 ns
MMIX4B12N300	Littelfuse	N-CHANNEL	COMPLEX	YES	100 W	22 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	GULL WING	RECTANGULAR	4		705 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V	20 V			DUAL	R-PDSO-G9		ISOLATED							460 ns
IXGT22N170	Littelfuse	N-CHANNEL	SINGLE	YES		44 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1			2	SMALL OUTLINE		150 Cel	SILICON	1700 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
IXGT32N170	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		920 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	90 ns
IXGT25N250	Littelfuse	N-CHANNEL	SINGLE	YES		60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		409 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	301 ns
IXGT24N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	80 ns	456 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	54 ns
IXGT32N60C	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	160 ns	110 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA	e3			25 ns
IXGT20N140C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	42 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		524 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-268AA	e3	10	260	35 ns
SGW6N60UF	Samsung	N-CHANNEL	SINGLE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		120 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					37 ns
SGR5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGR15N40L	Samsung	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY			GULL WING	RECTANGULAR	1		2800 ns	2	SMALL OUTLINE		150 Cel	SILICON	450 V				SINGLE	R-PSSO-G2			Not Qualified						1200 ns
SGR2N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		2.4 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		132 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					46 ns
SGW6N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	280 ns	120 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V		SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					37 ns
SGR20N40L	Samsung	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY			GULL WING	RECTANGULAR	1		2800 ns	2	SMALL OUTLINE		150 Cel	SILICON	450 V				SINGLE	R-PSSO-G2			Not Qualified						1200 ns
SGW5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGW13N60UF	Samsung	N-CHANNEL	SINGLE	YES		13 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					41 ns
SGW13N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	280 ns	160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V		SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					41 ns
SGW5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					27 ns
SGW23N60UF	Samsung	N-CHANNEL	SINGLE	YES		23 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		155 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.