YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXYT30N65C3H1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

59 ns

IXDT30N120

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

570 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e3

10

260

170 ns

IXYT40N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

1040 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

67 ns

T2960BB45E

Littelfuse

N-CHANNEL

SINGLE

YES

23800 W

3000 A

CERAMIC, METAL-SEALED COFIRED

3.15 V

UNSPECIFIED

ROUND

1

7800 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

END

O-CEDB-X3

3300 ns

IXGD17N100A-4T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXST30N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

436 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

80 ns

LGB8206ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXA20PT1200LB

Littelfuse

N-CHANNEL

YES

100 W

28 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

IXGD40N30-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYA24N100A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

GULL WING

RECTANGULAR

1

525 ns

2

SMALL OUTLINE

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

IXGD25N120A-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N5

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXA30PG1200DHGLB-TRR

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

150 W

43 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

2

350 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

Nickel (39) Tin (984)

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

110 ns

UL RECOGNIZED

IXYA15N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

122 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

36 ns

T0600TA45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

776 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2400 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3700 ns

IXGD50N60B-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGA14N120B

Littelfuse

N-CHANNEL

SINGLE

YES

28 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1210 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

LGB8207TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

IXYA20N65C3

Littelfuse

N-CHANNEL

SINGLE

YES

230 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

132 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

51 ns

IXGA20N100

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

700 ns

630 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

20 V

1400 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

60 ns

T1500EC33E

Littelfuse

N-CHANNEL

SINGLE

YES

2590 W

1500 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2550 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

1100 ns

IXYA8N250CHV

Littelfuse

N-CHANNEL

SINGLE

YES

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

GULL WING

RECTANGULAR

1

328 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

24 ns

LGD15N41ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

17000 ns

-55 Cel

15 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

9500 ns

AEC-Q101

T1200EA45E

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2132 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

3100 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4500 ns

IXGA8N100

Littelfuse

N-CHANNEL

SINGLE

YES

54 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

900 ns

990 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

20 V

1900 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

45 ns

IXGD45N120-7U

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

7

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGA20N250HV

Littelfuse

N-CHANNEL

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

IXGA24N120C3

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

51 ns

T0510VB45E

Littelfuse

N-CHANNEL

SINGLE

YES

4100 W

510 A

CERAMIC, METAL-SEALED COFIRED

3.2 V

UNSPECIFIED

ROUND

1

5000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

END

O-CEDB-X3

7100 ns

IXGD28N30-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

300 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGD20N100-4U

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

T0900EA45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1212 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2400 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3900 ns

IXGD4N100-1T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGD2N100-1M

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGA12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXST30N60C

Littelfuse

N-CHANNEL

SINGLE

YES

200 W

55 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

120 ns

290 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-268AA

e3

10

260

70 ns

LGB8206ARI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

T0800TA45E

Littelfuse

N-CHANNEL

SINGLE

YES

1267 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

4000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3300 ns

T0240NA45E

Littelfuse

N-CHANNEL

SINGLE

YES

316 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

4000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2400 ns

IXYA20N120C3HV

Littelfuse

N-CHANNEL

SINGLE

YES

278 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

60 ns

LGB8204ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

IXYA50N65C3

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

132 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

145 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

56 ns

IXGD25N100A-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N5

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD12N100-33

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYA12N250CHV

Littelfuse

N-CHANNEL

SINGLE

YES

310 W

28 A

PLASTIC/EPOXY

POWER CONTROL

4.5 V

GULL WING

RECTANGULAR

1

333 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

32 ns

IXGD22N50B-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

500 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

LGB8245TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

6000 ns

GULL WING

RECTANGULAR

1

12000 ns

12500 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

8000 ns

-55 Cel

15 V

20000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

4400 ns

AEC-Q101

IXYA20N120C4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

68 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

286 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

50 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.