YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGA48N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

200 ns

246 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

47 ns

IXA20RG1200DHGLB-TRR

Littelfuse

N-CHANNEL

YES

125 W

32 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

T2000BB45G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15500 W

2000 A

CERAMIC, METAL-SEALED COFIRED

3.1 V

UNSPECIFIED

ROUND

1

8300 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

END

O-CEDB-X3

5500 ns

IXLV19N250AS

Littelfuse

N-CHANNEL

SINGLE

YES

32 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

830 ns

2

SMALL OUTLINE

150 Cel

SILICON

2500 V

SINGLE

R-PSSO-G2

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

IXGA28N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

GULL WING

RECTANGULAR

1

870 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

46 ns

IXGD60N60-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

45 ns

IXGA4N100

Littelfuse

N-CHANNEL

SINGLE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1220 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

IXGV32N170

Littelfuse

N-CHANNEL

SINGLE

YES

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

920 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

IXGD32N60A-57

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGA9289

Littelfuse

N-CHANNEL

SINGLE

YES

120 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

124 ns

2

SMALL OUTLINE

150 Cel

SILICON

300 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

104 ns

IXGA7N60B

Littelfuse

N-CHANNEL

SINGLE

YES

54 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

450 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

FAST

TO-263AB

e3

10

260

25 ns

LGB8207ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

IXYA20N65B3

Littelfuse

N-CHANNEL

SINGLE

YES

230 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

39 ns

IXYT12N250CV1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

310 W

28 A

PLASTIC/EPOXY

POWER CONTROL

4.5 V

GULL WING

RECTANGULAR

1

303 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

28 ns

IXGD40N30A-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

T1800GA45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1808 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

4700 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

6000 ns

LGD18N45TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

9000 ns

2.85 V

GULL WING

RECTANGULAR

1

7000 ns

5400 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

10400 ns

-55 Cel

18 V

19000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

2920 ns

AEC-Q101

IXGA20N100A3

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

1630 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

162 ns

IXGA15N100B

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

IXBA14N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

1910 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

810 ns

IXGA15N120C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

470 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

e0

43 ns

T0960VC17G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2960 W

960 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2650 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1160 ns

IXGD12N100A-33

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD24N60A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXYA8N90C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

39 ns

LGD8205ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

IXGD50N60A-77

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD30N60B-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXA20PG1200DHGLB

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

130 W

32 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

2

350 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

Nickel (39) Tin (984)

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

110 ns

UL RECOGNIZED

IXGD28N30A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

300 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXYT55N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

650 W

175 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

910 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

53 ns

LGD8209TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

94 W

12 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

175 Cel

SILICON

445 V

-55 Cel

15 V

2 V

SINGLE

R-PSSO-G2

COLLECTOR

IXGA30N60C3C1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

37 ns

IXGA36N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

GULL WING

RECTANGULAR

1

1000 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

43 ns

IXA12IF1200TC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXGD28N90B-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

900 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

LGB18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

IXGA15N120B2

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

565 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXBA10N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

GULL WING

RECTANGULAR

1

1950 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

376 ns

IXGD8N100-2L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXA20I1200PZ

Littelfuse

N-CHANNEL

SINGLE

YES

165 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

580 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PDSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

78 ns

LGB15N41ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

17000 ns

-55 Cel

15 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

9500 ns

AEC-Q101

IXA4I1200UC

Littelfuse

N-CHANNEL

YES

45 W

9 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

IXGD20N60A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD28N60B-4X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXDT30N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

435 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

570 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e3

10

260

170 ns

IXGD160N30PC-66

Littelfuse

N-CHANNEL

SINGLE

YES

160 A

UNSPECIFIED

NO LEAD

SQUARE

1

267 ns

2

UNCASED CHIP

150 Cel

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.