YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGT40N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	GULL WING	RECTANGULAR	1		770 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	79 ns
IXGT25N160	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1		526 ns	2	SMALL OUTLINE		150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	283 ns
MMIX1G120N120A3V1	Littelfuse	N-CHANNEL		YES	400 W	220 A											Insulated Gate BIP Transistors	150 Cel		1200 V		20 V		5 V
IXBT28N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		60 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		2260 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				71 ns
IXBT20N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXBT15N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		25 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		2260 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				63 ns
IXGT30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	45 ns
IXGT50N60C2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		230 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
IXGT28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	320 ns	590 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	63 ns
IXGT60N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		198 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	54 ns
IXGT35N120B	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	GULL WING	RECTANGULAR	1	320 ns	340 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	77 ns
IXGT24N170A	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	80 ns	275 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	98 ns
IXGT40N120A2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		2300 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
IXBT16N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	GULL WING	RECTANGULAR	1		940 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	220 ns
IXGT32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGT24N170	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	500 ns	560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
MMIX1Y82N120C3H1	Littelfuse	N-CHANNEL		YES	320 W	78 A											Insulated Gate BIP Transistors	150 Cel		1200 V		20 V		5 V
IXGT4N250C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		471 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
MMIX1X340N65B4	Littelfuse	N-CHANNEL	SINGLE	YES	1200 W	450 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1		346 ns	21	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		DUAL	R-PDSO-G21		ISOLATED		LOW CONDUCTION LOSS					119 ns
IXGT28N30B	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXGT15N100C	Littelfuse	N-CHANNEL	SINGLE	YES		30 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		430 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA				43 ns
IXGT64N60A3	Littelfuse	N-CHANNEL	SINGLE	YES		64 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		777 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	65 ns
IXGT40N60B	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	60 ns
MMIX1X100N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	105 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		350 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.5 V		DUAL	R-PDSO-G21		ISOLATED		AVALANCHE RATED					92 ns
IXGT15N120CD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	190 ns	520 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA	e0			43 ns
IXGH50N50BS	Littelfuse	N-CHANNEL		YES	250 W	75 A							150 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V
IXBT24N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		1285 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	190 ns
IXGT40N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		1180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA				48 ns
IXBT16N170AHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	40 ns
IXGH28N30BS	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-G2		COLLECTOR	Not Qualified	FAST		e3	10	260	15 ns
IXGT31N60	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	800 ns	800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	15 ns
IXBT32N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	GULL WING	RECTANGULAR	1		795 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-268AA				573 ns
IXGT20N120B	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
IXGT50N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		550 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	48 ns
IXGT28N90B	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	220 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	65 ns
IXGT20N100	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	700 ns	700 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	30 ns
IXGT28N30A	Littelfuse	N-CHANNEL	SINGLE	YES		56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		150 ns	2	SMALL OUTLINE		150 Cel	SILICON	300 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXGT64N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	GULL WING	RECTANGULAR	1	150 ns	226 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	66 ns
IXGT32N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGT45N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	700 ns	1400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	96 ns
IXGT24N60C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	48 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	110 ns	130 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST SWITCHING	TO-268AA	e3	10	260	15 ns
IXBT28N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		30 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1			2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
IXGT50N50B	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE		150 Cel	SILICON	500 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA				50 ns
IXGT35N120C	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		480 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e0			86 ns
IXBT20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXGT39N60B	Littelfuse	N-CHANNEL	SINGLE	YES		76 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		710 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
IXGT32N170A	Littelfuse	N-CHANNEL	SINGLE	YES		32 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	107 ns
MMIX1G320N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		595 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		DUAL	R-PDSO-G21		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	107 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.