Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
140 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
140 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
C BEND |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.2 V |
DUAL |
R-PDSO-C8 |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
43 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
170 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
45 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 A |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.2 V |
DUAL |
R-PDSO-F8 |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
130 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-F8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
122 W |
50 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
8 V |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
4 V |
1.2 V |
DUAL |
R-PDSO-F8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
4 V |
1.2 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
4 V |
1.2 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
43 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
63 W |
25 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
300 A |
UNSPECIFIED |
POWER AMPLIFIER |
2 V |
NO LEAD |
SQUARE |
1 |
920 ns |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1250 V |
30 V |
6.8 V |
UPPER |
S-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
40 W |
30 A |
Insulated Gate BIP Transistors |
150 Cel |
360 V |
30 V |
5 V |
|||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
300 A |
Insulated Gate BIP Transistors |
150 Cel |
1250 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-F8 |
1 |
Not Qualified |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
29.4 W |
10 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
200 A |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
300 A |
Insulated Gate BIP Transistors |
150 Cel |
1250 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
150 A |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.2 V |
DUAL |
R-PDSO-F8 |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
112 W |
40 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
8 V |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
4 V |
1.2 V |
DUAL |
R-PDSO-F8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
150 A |
Insulated Gate BIP Transistors |
150 Cel |
1250 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1.5 V |
||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
112 W |
40 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
8 V |
|||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
223 W |
250 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
120 ns |
229 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
300 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
43 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
600 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
320 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
75 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
500 W |
106 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
586 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
46 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
SILICON |
1000 V |
UPPER |
R-XUUC-N5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
230 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
GULL WING |
RECTANGULAR |
1 |
220 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-268AA |
e3 |
10 |
260 |
60 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
500 A |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
1 |
610 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
1700 V |
END |
O-CEDB-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
280 ns |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
180 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
GULL WING |
RECTANGULAR |
1 |
720 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
61 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
500 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
7 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N7 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
6 V |
GULL WING |
RECTANGULAR |
1 |
100 ns |
210 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
350 ns |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
40 ns |
|||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
32 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
825 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
2500 V |
PURE TIN |
SINGLE |
R-PSSO-G2 |
ISOLATED |
Not Qualified |
TO-268AA |
145 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
430 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1000 V |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
43 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
350 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.