YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJH60D1DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJH60D2DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJP4010AGE-00#P5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-C8

RJH60M1DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

43 ns

RJH60M2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

RJH60D3DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJP4007ANS-00-Q6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

CY20AAJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

130 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

CY25CAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJP60F0DPE-00-J3

Renesas Electronics

N-CHANNEL

YES

122 W

50 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

CY20AAJ-8H-T13#F10

Renesas Electronics

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1.5 V

NOT SPECIFIED

NOT SPECIFIED

CY25CAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CY25BAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-G8

Not Qualified

CY20AAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJH60M1DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

43 ns

RJH60V2BDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

63 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS27DWS-80#W0

Renesas Electronics

N-CHANNEL

SINGLE

YES

300 A

UNSPECIFIED

POWER AMPLIFIER

2 V

NO LEAD

SQUARE

1

920 ns

5

UNCASED CHIP

175 Cel

SILICON

1250 V

30 V

6.8 V

UPPER

S-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

165 ns

RJP30H1DPD-00#J2

Renesas Electronics

N-CHANNEL

YES

40 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

CT20ASJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP1CS07DWA-80#W0

Renesas Electronics

N-CHANNEL

YES

300 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP4003ANS-00-Q1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-F8

1

Not Qualified

RJH60A01RDPD-A0#J2

Renesas Electronics

N-CHANNEL

YES

29.4 W

10 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

CY25BAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

CY20AAJ-8H-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJP65S06DWA-80#W0

Renesas Electronics

N-CHANNEL

YES

200 A

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS07DWT-80#X0

Renesas Electronics

N-CHANNEL

YES

300 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP4009ANS-01-Q6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

150 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-F8

CY25AAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJP6016JPE-00#J3

Renesas Electronics

N-CHANNEL

YES

112 W

40 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

8 V

RJP4002ANS-00-Q1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJP1CS05DWT-80#X0

Renesas Electronics

N-CHANNEL

YES

150 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP4003ASA-00-Q0

Renesas Electronics

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1.5 V

RJP6016JPE-00-J3

Renesas Electronics

N-CHANNEL

YES

112 W

40 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

8 V

CT25ASJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

IXGA42N30C3

Littelfuse

N-CHANNEL

SINGLE

YES

223 W

250 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

120 ns

229 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXXA50N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

320 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

75 ns

IXGD25N120-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYA30N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

500 W

106 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

GULL WING

RECTANGULAR

1

586 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

46 ns

IXGD25N100-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYT20N120C3D1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

36 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

60 ns

TX168NA17A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

610 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

280 ns

IXGA20N120B3

Littelfuse

N-CHANNEL

SINGLE

YES

180 W

36 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

61 ns

IXGD24N50B-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

500 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD35N120B-7U

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

7

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXBA16N170AHV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

16 A

PLASTIC/EPOXY

POWER CONTROL

6 V

GULL WING

RECTANGULAR

1

100 ns

210 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

350 ns

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

40 ns

IXLT19N250A

Littelfuse

N-CHANNEL

SINGLE

YES

32 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

825 ns

2

SMALL OUTLINE

150 Cel

SILICON

2500 V

PURE TIN

SINGLE

R-PSSO-G2

ISOLATED

Not Qualified

TO-268AA

145 ns

IXGA15N100C

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXA4IF1200TC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

9 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.