YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IRG4CF50WB	Infineon Technologies	N-CHANNEL	SINGLE	YES			UNSPECIFIED				NO LEAD	ROUND	1			2	UNCASED CHIP	Insulated Gate BIP Transistors			SILICON	900 V			6 V		UPPER	O-XUUC-N	1		Not Qualified
IRG4RC10UD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		345 ns	2	SMALL OUTLINE				SILICON	600 V				Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e0	30	240	56 ns
IRG4BC15UD-SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	14 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	37 ns
IRG4BC20UD-SPBFTRL	Infineon Technologies	N-CHANNEL		YES	60 W	6.5 A								170 ns				Insulated Gate BIP Transistors		150 Cel		600 V		20 V	6 V	MATTE TIN OVER NICKEL			1					e3
IRG7S313UTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	78 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		276 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	330 V		30 V	4.7 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			25 ns
AUIRG7CH80K6B-M	Infineon Technologies	N-CHANNEL	SINGLE	YES		200 A	UNSPECIFIED	POWER CONTROL			NO LEAD	SQUARE	1		1220 ns	3	UNCASED CHIP	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		30 V	7.5 V		UPPER	S-XUUC-N3			Not Qualified						330 ns
ST1200FXF21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	7100 W	1200 A	CERAMIC, METAL-SEALED COFIRED	MOTOR CONTROL			UNSPECIFIED	ROUND	1		2500 ns	4	DISK BUTTON	Insulated Gate BIP Transistors		125 Cel	SILICON	3300 V		20 V			END	O-CEDB-X4			Not Qualified						5500 ns
GT5G103(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V
GT8G134	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		1800 ns	8	SMALL OUTLINE			150 Cel	SILICON	400 V					DUAL	R-PDSO-G8			Not Qualified						800 ns
GT8G151(TE12L1)	Toshiba	N-CHANNEL		YES	830 W													Insulated Gate BIP Transistors		150 Cel		400 V		4 V
GT8Q101(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V				TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			400 ns
GT25G101(SM)	Toshiba	N-CHANNEL	SINGLE	YES	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns	4500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V		25 V	7 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			150 ns
GT15J311(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT10J312(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	10 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT5J311(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT8G151	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY	POWER CONTROL			FLAT	RECTANGULAR	1		2200 ns	8	SMALL OUTLINE				SILICON	400 V					DUAL	R-PDSO-F8									2400 ns
GT30J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		150 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V				TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING		e0			400 ns
GT8G151(TE12L)	Toshiba	N-CHANNEL		YES	830 W													Insulated Gate BIP Transistors		150 Cel		400 V		4 V
GT8G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY			7 V	GULL WING	RECTANGULAR	1		2400 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V	1.5 V	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1700 ns
GT8G121(SM)	Toshiba	N-CHANNEL		YES	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V		Tin/Lead (Sn/Pb)								e0
GT10Q311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V				TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING		e0			400 ns
GT5G102(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified						900 ns
GT8G131(TE12L)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY			7 V	GULL WING	RECTANGULAR	1		2400 ns	8	SMALL OUTLINE			150 Cel	SILICON	400 V		6 V	1.5 V		DUAL	R-PDSO-G8									1700 ns
GT15J331(2-10S2C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V				TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED		e0			220 ns
GT8G136	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	150 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		3500 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V		TIN LEAD	DUAL	R-PDSO-G8			Not Qualified			e0			3200 ns
GT8G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1400 ns
GT8J102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED
GT45F131	Toshiba	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		320 ns	2	SMALL OUTLINE			150 Cel	SILICON	300 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified						220 ns
GT20G102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	60 W	150 Cel	SILICON	400 V		20 V	5 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified
GT20G101(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	60 W	150 Cel	SILICON	400 V		25 V	7 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified
GT8G103(SM)	Toshiba	N-CHANNEL		YES	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V
GT10G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	200 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V	1.2 V		DUAL	R-PDSO-G8			Not Qualified						3100 ns
GT5G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		1800 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1400 ns
GT5G133	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.83 W		PLASTIC/EPOXY				FLAT	RECTANGULAR	1		2100 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		4 V			DUAL	R-PDSO-F8			Not Qualified						2100 ns
GT8G132	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2200 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1100 ns
GT20J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	120 W	150 Cel	SILICON	600 V		20 V	8 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED		e0			400 ns
MP7002	Toshiba			YES	37 W	40 A	PLASTIC/EPOXY			2.7 V	GULL WING	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel		600 V		20 V			SINGLE	R-PSFM-G7			Not Qualified
GT5G102(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors		150 Cel		400 V		20 V
GT45G131	Toshiba	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		360 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified						160 ns
S6X06B(ANSD,Q)	Toshiba	N-CHANNEL	SINGLE	YES	5000 W		UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	ROUND	1		9000 ns	4	DISK BUTTON			125 Cel	SILICON	4500 V	-40 Cel	20 V			UNSPECIFIED	O-XXDB-X4									1500 ns
ST1000EX21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		1000 A	CERAMIC, METAL-SEALED COFIRED	POWER CONTROL			UNSPECIFIED	ROUND	1		1700 ns	4	DISK BUTTON				SILICON	2500 V					END	O-CEDB-X4									2200 ns
GT8G133	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W		PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V	1.4 V		DUAL	R-PDSO-G8			Not Qualified						1700 ns
GT15Q311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		720 ns	3	SMALL OUTLINE			150 Cel	SILICON	1200 V				TIN LEAD	SINGLE	R-PSSO-G3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING		e0			170 ns
GT8Q102(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	500 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	1200 V		20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0
GT8G121(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2100 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					2500 ns
GT15J103(SM)	Toshiba	N-CHANNEL	SINGLE	YES	70 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	70 W	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED					400 ns
GT25G102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V		20 V	5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0
GT5G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1100 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.