YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXRA15N120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

253 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AA

e3

10

260

33.5 ns

IXGD17N100-4T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGA48N60C3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

45 ns

T0900EB45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

900 A

CERAMIC, METAL-SEALED COFIRED

UNSPECIFIED

ROUND

1

4300 ns

3

DISK BUTTON

SILICON

4500 V

UNSPECIFIED

O-CXDB-X3

Not Qualified

5600 ns

IXGA30N60C3

Littelfuse

N-CHANNEL

SINGLE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

45 ns

IXGD15N120B-4U

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

LGB8202ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

24000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

18500 ns

AEC-Q101

IXGA12N120A2

Littelfuse

N-CHANNEL

SINGLE

YES

24 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1750 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

IXYA24N100C4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

243 ns

2

SMALL OUTLINE

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

50 ns

IXGA30N60C3D4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

IXGD12N60B-33

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXDT30N120AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

50 A

PLASTIC/EPOXY

MOTOR CONTROL

130 ns

GULL WING

RECTANGULAR

1

100 ns

400 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

FAST

TO-268AA

e3

10

260

75 ns

LGD18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

T2400GA45E

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3302 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

6100 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

7000 ns

LGD8201TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

IXA40PG1200DHGLB

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

230 W

63 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

GULL WING

RECTANGULAR

2

350 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

Nickel (39) Tin (984)

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

110 ns

UL RECOGNIZED

IXYA20N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

132 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

51 ns

IXA12IF1200PC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

PURE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

110 ns

IXDA20N120AS

Littelfuse

N-CHANNEL

SINGLE

YES

200 W

34 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

450 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

120 ns

IXGA12N100A

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

T0600NC17A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1850 W

600 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2540 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1020 ns

T1000EC33G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

RECTANGULAR

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

T1290BF65A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15200 W

1290 A

CERAMIC, METAL-SEALED COFIRED

4 V

UNSPECIFIED

ROUND

1

6400 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4700 ns

IXGA12N100

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

IXGA16N60C2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

43 ns

T0840NC17E

Littelfuse

N-CHANNEL

SINGLE

YES

2590 W

840 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2550 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1100 ns

T0600AF65G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7100 W

600 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6900 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

5000 ns

T0900AF65E

Littelfuse

N-CHANNEL

SINGLE

YES

10600 W

900 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6600 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4600 ns

T0900DF65A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10600 W

900 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6600 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4600 ns

T0385HF65E

Littelfuse

N-CHANNEL

SINGLE

YES

4600 W

385 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4900 ns

IXGA16N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

280 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

43 ns

T0258HF65G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3000 W

258 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

7200 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

5200 ns

T0425VC33G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2750 W

425 A

CERAMIC, METAL-SEALED COFIRED

2.95 V

UNSPECIFIED

ROUND

1

6100 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3600 ns

IXGA12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1000 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

T1440VC17E

Littelfuse

N-CHANNEL

SINGLE

YES

4400 W

1440 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

3000 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1350 ns

T1375DF65E

Littelfuse

N-CHANNEL

SINGLE

YES

16000 W

1375 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6400 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4500 ns

T1000TC33E

Littelfuse

N-CHANNEL

SINGLE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

ROUND

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

IXGT28N120B

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

320 ns

590 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

63 ns

IXBT16N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

16 A

PLASTIC/EPOXY

POWER CONTROL

6 V

GULL WING

RECTANGULAR

1

100 ns

210 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

350 ns

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

40 ns

IXGT28N60D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

SILICON

PURE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-268AA

IXGT15N120C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

470 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e0

43 ns

IXBT22N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

290 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

2025 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

406 ns

IXGT32N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

GULL WING

RECTANGULAR

1

1380 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

239 ns

IXGT72N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

540 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

160 ns

240 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

490 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

64 ns

IXGT40N60C

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

155 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

60 ns

IXGT24N60B

Littelfuse

N-CHANNEL

SINGLE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

SILICON

600 V

PURE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-268AA

IXGT15N120B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

192 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

GULL WING

RECTANGULAR

1

255 ns

302 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

495 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

40 ns

IXBT10N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

3.8 V

GULL WING

RECTANGULAR

1

1800 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.