YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKD15N60RFXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

30 ns

IRGS4615DPBF

Infineon Technologies

N-CHANNEL

YES

99 W

23 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

IXGT6N170AHV-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

7 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

91 ns

STGB18N40LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

30 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

16 V

2.3 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AB

e3

4450 ns

STGB7H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

14 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

263 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

42.8 ns

STGD10HF60KD

STMicroelectronics

N-CHANNEL

YES

62.5 W

18 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGB3245G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

8100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

11000 ns

-40 Cel

12 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

3500 ns

AEC-Q101

FGB3245G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

150 W

23 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

12 V

2.2 V

1

260

IKD06N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

149 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

17 ns

AEC-Q101

IRG4BC30W-STRL

International Rectifier

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

41 ns

IRG4BC30W-STRR

International Rectifier

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

41 ns

IRGR4607DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

95 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

51 ns

IRGS4056DPBF

Infineon Technologies

N-CHANNEL

YES

140 W

24 A

PLASTIC/EPOXY

24 ns

GULL WING

RECTANGULAR

31 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

600 V

30 V

6.5 V

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

IRGS4607DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

95 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

51 ns

IXBT42N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

104 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

950 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

652 ns

MMIX1Y100N120C3H1

Littelfuse

N-CHANNEL

YES

400 W

92 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

NGTB10N60R2DT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE

2.3 V

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

188 ns

RGT8BM65DTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

158 ns

2

SMALL OUTLINE

SILICON

650 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

e3

54 ns

SIGC186T170R3EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

9

UNCASED CHIP

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

STGD7NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

55 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

1160 ns

AFGB30T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

78.7 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

30 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263

e3

30

260

33.6 ns

AEC-Q101

FGD3440G2-F085

Onsemi

N-CHANNEL

YES

166 W

26.9 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

450 V

14 V

2.2 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGD3440G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

166 W

26.9 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

450 V

14 V

2.2 V

MATTE TIN

1

e3

30

260

IKB06N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

TO-263AB

e3

17 ns

IRGR2B60KDTRPBF

Infineon Technologies

N-CHANNEL

YES

35 W

6.3 A

25 ns

75 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6 V

1

IXGA30N120B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

IXGT10N170A

Littelfuse

N-CHANNEL

SINGLE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

240 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268

e3

10

260

107 ns

NGTB35N60FL2WG

Onsemi

N-CHANNEL

YES

300 W

70 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

STGD10NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

247 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

19 ns

HGT1S20N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

52 ns

IRGS4B60KD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

40 ns

NGB8207ABNT4G

Onsemi

N-CHANNEL

YES

165 W

20 A

2700 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

365 V

15 V

2 V

MATTE TIN

e3

IXGH16N170

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

32 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1100 ns

1600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

90 ns

IXGT16N170A

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

150 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

97 ns

STGB30V60F

STMicroelectronics

N-CHANNEL

SINGLE

YES

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

59 ns

IXBT42N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

GULL WING

RECTANGULAR

1

1070 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

224 ns

IXYY8N90C3

Littelfuse

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

10

260

39 ns

STGD10NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23 ns

IXGA12N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

1545 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

202 ns

IXGT16N170AH1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

150 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

97 ns

IXBT12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

204 ns

IXGT2N250

Littelfuse

N-CHANNEL

SINGLE

YES

32 W

5.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

278 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

115 ns

IXGT72N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

540 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

GULL WING

RECTANGULAR

1

885 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

61 ns

IXYA20N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

GULL WING

RECTANGULAR

1

646 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

50 ns

IXYT30N450HV

Littelfuse

N-CHANNEL

SINGLE

YES

430 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

GULL WING

RECTANGULAR

1

1545 ns

2

SMALL OUTLINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

632 ns

IXYT85N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

1150 W

300 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

990 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

73 ns

RGT16BM65DTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

e3

27 ns

IXA4IF1200UC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

9 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.