Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
193 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
-40 Cel |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
99 W |
23 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
7 V |
GULL WING |
RECTANGULAR |
1 |
271 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
91 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
30 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AB |
e3 |
4450 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
GULL WING |
RECTANGULAR |
1 |
263 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
42.8 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
YES |
62.5 W |
18 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
YES |
150 W |
23 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
440 V |
12 V |
2.2 V |
1 |
260 |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
17 ns |
AEC-Q101 |
||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE |
YES |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
300 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e0 |
41 ns |
|||||||||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE |
YES |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
300 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e0 |
41 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
11 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
95 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
51 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
140 W |
24 A |
PLASTIC/EPOXY |
24 ns |
GULL WING |
RECTANGULAR |
31 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
30 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-263AB |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
11 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
95 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
51 ns |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
500 W |
104 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
950 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
3000 V |
-55 Cel |
25 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-268AA |
e3 |
10 |
260 |
652 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
YES |
400 W |
92 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
5 V |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
72 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
220 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
188 ns |
||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
158 ns |
2 |
SMALL OUTLINE |
SILICON |
650 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
e3 |
54 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
SQUARE |
1 |
9 |
UNCASED CHIP |
175 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N9 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
55 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
1160 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
220 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
78.7 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
30 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263 |
e3 |
30 |
260 |
33.6 ns |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
166 W |
26.9 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
450 V |
14 V |
2.2 V |
Matte Tin (Sn) - annealed |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
YES |
166 W |
26.9 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
450 V |
14 V |
2.2 V |
MATTE TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
249 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
17 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
35 W |
6.3 A |
25 ns |
75 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6 V |
1 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
GULL WING |
RECTANGULAR |
1 |
380 ns |
331 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
53 ns |
|||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
240 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268 |
e3 |
10 |
260 |
107 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
300 W |
70 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
e3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
247 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
19 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
164 W |
45 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
28 ns |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
210 ns |
388 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
60 ns |
-55 Cel |
20 V |
660 ns |
6.3 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
52 ns |
|||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
40 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
165 W |
20 A |
2700 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
365 V |
15 V |
2 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
190 W |
32 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
1100 ns |
1600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
90 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
190 W |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
330 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
97 ns |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
225 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
59 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
360 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
GULL WING |
RECTANGULAR |
1 |
1070 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
224 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
238 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
10 |
260 |
39 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
242 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
23 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
100 W |
22 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
1545 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
202 ns |
|||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
190 W |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
330 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
97 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
160 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
GULL WING |
RECTANGULAR |
1 |
720 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3000 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
204 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
32 W |
5.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
278 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
115 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
540 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
GULL WING |
RECTANGULAR |
1 |
885 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
61 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
646 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
50 ns |
|||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
430 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
GULL WING |
RECTANGULAR |
1 |
1545 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
632 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
1150 W |
300 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
990 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
73 ns |
||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
94 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
170 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
e3 |
27 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
350 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.