YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC06T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

25 ns

SIGC11T60NCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

130 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

28 ns

SIGC68T170R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

SIGC15T60UN

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

98 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

17 ns

SIGC08T60SX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

291 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

S-XUUC-N2

Not Qualified

e3

32 ns

SIGC39T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

401 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

SIGC156T120R2CSX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

390 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

190 ns

SIGC11T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

224 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

40 ns

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

78 ns

SIGC42T60SNCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

460 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

SIGC15T60EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC81T120R2CLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

370 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC128T170R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC156T120R2CQX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

451 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

274 ns

SIGC156T120R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

160 ns

NO LEAD

SQUARE

1

100 ns

470 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

240 ns

SIGC28T60SEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N3

SIGC10T60EX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC14T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

31 A

UNSPECIFIED

MOTOR CONTROL

40 ns

NO LEAD

SQUARE

1

55 ns

280 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

57 ns

SIGC32T120R3LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SGB10N60A

Infineon Technologies

N-CHANNEL

SINGLE

YES

92 W

20 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

32 ns

224 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

40 ns

SIGC04T60G

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

25 ns

SP000014616

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

16.1 ns

SKB15N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

54 ns

SIGC42T120CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SKB15N60HSATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

252 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

27 ns

SIGC57T120R3EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

135 ns

SGB02N120XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

SIGC42T120CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

52 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

465 ns

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

SIGC42T120CQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

346 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

63 ns

SIGC186T170R3EX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

9

UNCASED CHIP

SILICON

1700 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC84T120R3LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

SIGC156T120R2CLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

480 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC04T60GSX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

249 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

17 ns

SIGC158T120R3LEX1SA6

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.32 V

NO LEAD

SQUARE

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC61T60N

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

175 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

85 ns

SIGC07T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC03T60E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC16T120CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

27 ns

461 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

56 ns

SIGC128T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC08T65EX1SA1

Infineon Technologies

N-CHANNEL

YES

15 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SIGC39T60E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

SIGC07T60NCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC104T170R2CX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC16T120C

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

100 ns

NO LEAD

RECTANGULAR

1

120 ns

460 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

SGB07N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

16.5 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

61 ns

520 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

56 ns

SP000960698

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

249 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

17 ns

SIGC41T120R3LEX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC158T120R3LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.32 V

NO LEAD

SQUARE

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.