YES Insulated Gate Bipolar Transistors (IGBT) 1,895

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGS4615DTRRPBF

Infineon Technologies

N-CHANNEL

YES

99 W

23 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

IGC100T65T8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.23 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IGC13T120T6LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGS4630DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

65 ns

IGB10N60TXT

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

296 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

21 ns

IRGS4640DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

65 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.9 V

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

64 ns

IRGS4640DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

65 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.9 V

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

64 ns

IRGC15B120UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

ILB03N60-E3045A

Infineon Technologies

N-CHANNEL

YES

27 W

3 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

3.9 V

IGC50T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IGC114T170S8RHX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1700 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC27T120T8QX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC10R60D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N2

Not Qualified

IGC07R60DEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

IGC18T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC15B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IGC50T120T6RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

4

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGS4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

64 ns

IRGC35B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IKB30N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

188 W

62 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

204 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30 ns

P2000DL45X168

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

ROUND

1

2460 ns

4

DISK BUTTON

150 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

580 ns

P3000ZL45X168

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

ROUND

1

11500 ns

4

DISK BUTTON

150 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

690 ns

SIGC76T60R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC12T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

329 ns

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

50 ns

SGB02N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

354 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

34 ns

SIGC223T120R2CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

660 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

225 ns

SIGC121T60NR2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

260 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

155 ns

SIGC156T120R2CSX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

390 ns

10

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N10

INTEGRATED GATE RESISTOR

190 ns

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

SIGC20T120LEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC12T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

25 ns

NO LEAD

SQUARE

1

76 ns

329 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

50 ns

SIGC84T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

UPPER

R-XUUC-N

Not Qualified

e3

330 ns

SIGC28T60EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IEC-62258-3

SKB10N60A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

92 W

20 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

32 ns

224 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

40 ns

SIGC76T60R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

SIGC25T120CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

390 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

SIGC04T60GE

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SGB15N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

138 W

31 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

GULL WING

RECTANGULAR

1

55 ns

315 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

54 ns

SIGC03T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

2 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

354 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

34 ns

SGB30N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

58 ns

GULL WING

RECTANGULAR

1

70 ns

391 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

78 ns

SIGC156T60NR2

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

286 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N

Not Qualified

206 ns

SIGC04T65EX1SA1

Infineon Technologies

N-CHANNEL

YES

6 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SIGC12T120LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

500 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

300 ns

SIGC109T120R3LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC10T60E

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC144T170R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC07T60UNX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

122 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

11 ns

SIGC54T60R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.