Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4640DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

65 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.9 V

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

64 ns

FS820R08A6P2BBPSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

714 W

820 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

1110 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

IRGP50B60PDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 W

75 A

PLASTIC/EPOXY

POWER CONTROL

36 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

e3

59 ns

FP100R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

IRG4PC50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

214 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

340 ns

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

71 ns

2ED300C17SROHSBPSA1

Infineon Technologies

N-Channel

85 Cel

SILICON

-25 Cel

1

IKZ75N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

4

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

70 ns

FS75R12KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

AUIRG4PH50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

57 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

638 ns

2170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG4BC40WLPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

294 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-262

e3

48 ns

IKW40N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

78 ns

2ED300C17STROHSBPSA1

Infineon Technologies

N-Channel

85 Cel

SILICON

-25 Cel

1

SKB02N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

FF450R12KT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

580 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

720 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

230 ns

FP20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

SKW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

IRG4PC50FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

190 ns

620 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

52 ns

IKW25N120T2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

504 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

49 ns

FS300R12KE3BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

500 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

810 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

FS35R12KT3BPSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IKW25N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

397 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

61 ns

IKW30N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

53 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

279 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

38 ns

IKW50N65F5FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

IRGPS40B120UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

115 ns

SGD02N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

354 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

34 ns

IRGP4650D-EPBF

Infineon Technologies

N-CHANNEL

NO

268 W

76 A

42 ns

54 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IKW75N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-247AD

e3

69 ns

SGW20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

66 ns

FZ250R65KE3NPSA1

Infineon Technologies

4800 W

250 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

6500 V

20 V

NOT SPECIFIED

NOT SPECIFIED

SGB02N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

IRG4PC50FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

660 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

e3

86 ns

FP40R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

POWER CONTROL

WIRE

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-W24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

IFF600B12ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

750 ns

13

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

IKW40N120T2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

60 ns

IRGS14C40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

LOW SATURATION VOLTAGE

TO-263AB

e3

30

260

3700 ns

IRGPS60B120KDP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

105 A

PLASTIC/EPOXY

MOTOR CONTROL

45 ns

THROUGH-HOLE

RECTANGULAR

1

58 ns

411 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

6 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

104 ns

IKQ75N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

454 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

81 ns

IKW40N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

78 ns

SGP07N120XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

16.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

56 ns

IKW75N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

215 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IKQ120N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

398 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

84 ns

FS75R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FB30R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

245 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

IRG4BC30FD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

69 ns

FS50R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

83 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FF600R12ME4B72BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

995 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

770 ns

7

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

IHW15N120E1XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1450 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IHW30N120R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.