Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGNI0100M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

100 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

OM6502ST

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

10 A

METAL

POWER CONTROL

1000 ns

PIN/PEG

SQUARE

1

1500 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-257AA

e0

150 ns

IFF450B12ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

690 ns

13

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

FP30R07U1E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

50 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

255 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

39 ns

UL APPROVED

IRGVH50FU

Infineon Technologies

N-CHANNEL

NO

200 W

45 A

Insulated Gate BIP Transistors

150 Cel

1200 V

6 V

Tin/Lead (Sn/Pb)

e0

FS225R12OE4PBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

570 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

230 ns

UL RECOGNIZED

IHW40N65R6

Infineon Technologies

N-Channel

210 W

83 A

256 ns

175 Cel

SILICON

650 V

20 V

4.8 V

36 ns

OM60L60HB

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

METAL

MOTOR CONTROL

1.8 V

SOLDER LUG

SQUARE

2

1100 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

600 V

TIN LEAD

DUAL

S-MDFM-D6

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

250 ns

GA150TD120U

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

894 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

622 ns

UL APPROVED

IGC06R60DX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

IGC27T120T6LX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG6S320U

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

270 ns

2

SMALL OUTLINE

SILICON

330 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

75 ns

6PS18012E4FG38393

Infineon Technologies

N-Channel

150 Cel

SILICON

1200 V

-25 Cel

IRG8P40N120KD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

60 ns

BSM300GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

375 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

402 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

176 ns

BSM600GA120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3900 W

900 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IHW30N90R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

900 V

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

BSM25GD120D2

Infineon Technologies

200 W

35 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

IGC11T120T8LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FZ1500R25KF1

Infineon Technologies

15600 W

1500 A

3.5 V

1

Insulated Gate BIP Transistors

125 Cel

2500 V

20 V

BSM25GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

45 A

UNSPECIFIED

3.15 V

UNSPECIFIED

RECTANGULAR

7

420 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

FS450R12OE4PBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

680 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

290 ns

UL RECOGNIZED

IGC10T65QEX1SA1

Infineon Technologies

N-Channel

2.32 V

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

IRGC10B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

BSM35GP120GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

e3

105 ns

FP75R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

385 W

75 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

F5-75R06KE3_B5

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FZ2400R17HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

1

ISOLATED

760 ns

IGB03N120H2XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

DF200R12KE3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

295 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

FZ3600R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

NO

18000 W

4800 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

3

2120 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1010 ns

IGP20N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

170 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

31 ns

IRG5K100HF12B

Infineon Technologies

N-Channel

100 A

2.6 V

610 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

85000 ns

IHY20N135R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

505 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1350 V

20 V

6.4 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

FP200R12N3T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

454 ns

46

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X46

ISOLATED

UL RECOGNIZED

297 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IGC11T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRG5K15FF06Z

Infineon Technologies

N-Channel

15 A

2.1 V

235 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

25000 ns

IRG5K75HF12A

Infineon Technologies

N-Channel

75 A

2.6 V

570 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

90000 ns

BSM300GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

430 A

UNSPECIFIED

GENERAL PURPOSE SWITCHING

UNSPECIFIED

RECTANGULAR

1

680 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

AIKB20N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

GULL WING

RECTANGULAR

1

287 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

260

35 ns

AEC-Q101

IRGAC50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

OM200F120CMC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

840 ns

5

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e0

315 ns

FZ400R12KS4P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

UL APPROVED

FZ2400R12HP4HOSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3460 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1440 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

880 ns

IRGS4715DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

21 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

2 V

GULL WING

RECTANGULAR

1

30 ns

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

80 ns

-40 Cel

30 V

150 ns

7.4 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

50 ns

IGC189T120T6RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN RESISTOR

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AIHD10N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

198 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

27 ns

AEC-Q101

IFF2400P17AE4BPSA1

Infineon Technologies

N-Channel

2.3 V

150 Cel

SILICON

1700 V

-40 Cel

1

ISOLATED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.