Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ800R33KL2C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9800 W

1500 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1700 ns

IRGMC40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

FZ1600R17KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2300 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1770 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

750 ns

IRGS10B60KDPBFTRL

Infineon Technologies

N-Channel

35 A

294 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

4000 ns

FD200R65KF2KNOSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

6500 ns

9

FLANGE MOUNT

SILICON

6300 V

UPPER

R-XUFM-X9

ISOLATED

1120 ns

UL APPROVED

FS600R07A2E3_B32

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

530 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

6

540 ns

33

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FZ2400R12HP4

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

12500 W

3460 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1440 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

880 ns

IKA08N65ET6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

147 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

30 ns

FS450R17OE4P

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

1010 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

IGC50T120T8RLX1SA3

Infineon Technologies

N-Channel

2.07 V

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

IGC11T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS950R08A6P2LB

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

980 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

350 ns

IEC-61140

IFF600B12ME4_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

750 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

FS600R07A2E3

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

530 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

6

540 ns

33

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRGS10B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

276 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

50 ns

AIKW20N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

36 ns

AEC-Q101

FZ1800R17HP4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

900 ns

IHW40T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

92 ns

IRGS4610DTRRPBF

Infineon Technologies

N-CHANNEL

YES

77 W

16 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

IGB20N65S5

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

188 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

28 ns

FZ2400R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

930 ns

FZ3600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20000 W

4800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X9

1

ISOLATED

1050 ns

IRGSL14C40L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

SILICON

370 V

TIN LEAD

SINGLE

R-PSIP-T3

1

Not Qualified

LOW SATURATION VOLTAGE

TO-262AA

e0

3700 ns

F4100R12KS4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

130 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

26

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

DF1400R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

7700 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X6

1

ISOLATED

Not Qualified

260

340 ns

FP25R12W2T7

Infineon Technologies

N-Channel

1.74 V

670 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

ISOLATED

74 ns

IKZ75N65NH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

71 ns

IGB03N120H2

Infineon Technologies

N-CHANNEL

SINGLE

YES

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

16.1 ns

FS30R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

355 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

AIKW50N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

60 ns

AEC-Q101

IGC18T120T8LX1SA3

Infineon Technologies

N-Channel

2.07 V

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

FS900R08A2P2_B32

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

1546 W

UNSPECIFIED

POWER CONTROL

1.25 V

UNSPECIFIED

RECTANGULAR

6

820 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

2LS20017E42W36702NOSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

IHW30N60TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

50 ns

FZ1800R45HL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

IRGC75B120UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC100B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

FD1200R17KE3-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5950 W

1600 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

1

2100 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

IGC06R60DE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

FP25R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

25 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

1

ISOLATED

Not Qualified

260

210 ns

OM400L120CMS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1100 ns

4

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

e0

900 ns

DF1000R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

830 ns

FZ400R65KF1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7400 W

800 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

2

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

6300 V

20 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1120 ns

IRGS4B60KD1TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

40 ns

BUP303

Infineon Technologies

N-CHANNEL

NO

165 W

21 A

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IHW40N60RXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

264 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IRGS4B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

40 ns

F12-35R12KT4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

35 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

12

620 ns

38

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X38

1

ISOLATED

Not Qualified

260

210 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.