Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
9800 W |
1500 A |
UNSPECIFIED |
3.65 V |
UNSPECIFIED |
RECTANGULAR |
2 |
4250 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1700 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
31 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2300 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1770 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
750 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
35 A |
294 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
4000 ns |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
800 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
6500 ns |
9 |
FLANGE MOUNT |
SILICON |
6300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
1120 ns |
UL APPROVED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1250 W |
530 A |
UNSPECIFIED |
POWER CONTROL |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
540 ns |
33 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
12500 W |
3460 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1440 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
880 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
11 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
147 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
30 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
1010 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
310 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.07 V |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
8 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
1.35 V |
UNSPECIFIED |
RECTANGULAR |
6 |
980 ns |
33 |
FLANGE MOUNT |
150 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
350 ns |
IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
750 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1250 W |
530 A |
UNSPECIFIED |
POWER CONTROL |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
540 ns |
33 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
22 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
276 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
30 |
225 |
50 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
166 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
299 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
36 ns |
AEC-Q101 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1860 ns |
9 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
900 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
92 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
77 W |
16 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
125 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
GULL WING |
RECTANGULAR |
1 |
188 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
28 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1810 ns |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
930 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20000 W |
4800 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
3 |
2100 ns |
9 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
1050 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
SILICON |
370 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-262AA |
e0 |
3700 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
130 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
26 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
7700 W |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
6 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X6 |
1 |
ISOLATED |
Not Qualified |
260 |
340 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
1.74 V |
670 ns |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
ISOLATED |
74 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
395 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
485 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
71 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
62.5 W |
9.6 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
403 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
3.9 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
245 |
16.1 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
45 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
355 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
396 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
60 ns |
AEC-Q101 |
|||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.07 V |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1546 W |
UNSPECIFIED |
POWER CONTROL |
1.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
820 ns |
33 |
FLANGE MOUNT |
150 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
500 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
150 Cel |
SILICON |
1700 V |
-25 Cel |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
50 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1800 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
3 |
8060 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
470 ns |
IEC-60747; IEC-60749; IEC-60068 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
ROUND |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
SILICON |
1200 V |
6 V |
UPPER |
O-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
ROUND |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
SILICON |
1200 V |
6 V |
TIN LEAD |
UPPER |
O-XUUC-N |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
5950 W |
1600 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
2100 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1050 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
UPPER |
R-XUUC-N2 |
LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
160 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
1 |
ISOLATED |
Not Qualified |
260 |
210 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
1100 ns |
4 |
FLANGE MOUNT |
SILICON |
1200 V |
TIN LEAD |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
e0 |
900 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1910 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
830 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
7400 W |
800 A |
UNSPECIFIED |
4.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
6500 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
6300 V |
20 V |
TIN LEAD |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e0 |
1120 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
199 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
165 W |
21 A |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
264 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
199 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
30 |
225 |
40 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
210 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
12 |
620 ns |
38 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X38 |
1 |
ISOLATED |
Not Qualified |
260 |
210 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.