Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGC70T120T6RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FF800R17KP4_B2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

4850 W

1200 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

1650 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

260

790 ns

IGC04R60DX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FZ1600R17HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

1075 ns

DF80R12W2H3FB11BOMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

ILB03N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

4.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

240 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

3.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

AVALANCHE RATED

TO-263AB

e0

65 ns

IFS200B12N3E4_B37

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

363 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

168 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRGC75B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

SILICON

1200 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

FS150R17KE3G

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1040 W

240 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

1300 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

366 ns

AIKB40N65DF5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

207 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

36 ns

AEC-Q101

IRGC4061B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.95 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

S-XUUC-N2

AIKQ100N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

AEC-Q101

FS15R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

22 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

IGP20N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

211 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

32 ns

IGC109T120T6RLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IKZA40N65RH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

24 ns

Q67050-A4085-A003

Infineon Technologies

N-Channel

3.7 V

390 ns

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

190 ns

IGC15T60Q

Infineon Technologies

N-Channel

2.32 V

175 Cel

SILICON

600 V

-40 Cel

20 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

IRGC3B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

IKD15N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

260

26 ns

IRGC20B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IFS100B12N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X34

ISOLATED

210 ns

UL RECOGNIZED

IGC07T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUP314D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

42 A

PLASTIC/EPOXY

MOTOR CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

60 ns

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-218

e3

75 ns

BSM30GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

135 W

40 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

103 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

39 ns

BSM300GA120DN2E3166

Infineon Technologies

2500 W

430 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FP25R12W2T4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

520 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

IFS100B17N3E4P_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

600 W

150 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

780 ns

34

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X34

ISOLATED

260 ns

UL APPROVED

FF225R12ME4P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

600 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

OM6526CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

6.5 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IRGS15B60KDTRRP

Infineon Technologies

N-Channel

31 A

226 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

4000 ns

IFS150B17N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

760 ns

37

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X37

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

AIHD04N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

18 ns

AEC-Q101

FD450R12KE4P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

1

800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

325 ns

BSM50GD120DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

85 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

110 ns

IFS200B12N3E4B31BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

528 ns

41

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X41

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

IGC31T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IRG8P40N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

60 ns

FD1200R17KE3KB2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

2100 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

IRGS4065PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

178 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

560 ns

2

SMALL OUTLINE

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

58 ns

FZ1600R17HP4_B21

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

10500 W

1600 A

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

690 ns

UL APPROVED

IKB20N60H3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

31 ns

IGC28T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

DF1000R17IE4P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

AIKB50N65DH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

305 W

80 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

181 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

38 ns

AEC-Q101

IKP10N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

FZ800R12KS4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7600 W

1200 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

225 ns

FS600R07A2E3B31BOSA1

Infineon Technologies

N-Channel

1300 W

530 A

1.5 V

540 ns

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

ISOLATED

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.