Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
300 W |
80 A |
120 ns |
780 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
200 W |
50 A |
2.7 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
342 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-251 |
NOT SPECIFIED |
NOT SPECIFIED |
20 ns |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
300 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
500 ns |
FLANGE MOUNT |
Other Transistors |
SILICON |
1200 V |
UPPER |
R-XUFM-X |
ISOLATED |
140 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
210 W |
45 A |
UNSPECIFIED |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
350 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
140 W |
32 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
6500 ns |
7 |
FLANGE MOUNT |
SILICON |
6300 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
1120 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
1.26 V |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
9.6 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
403 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
16.1 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
370 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
1030 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
480 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1500 W |
340 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1500 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
350 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
500 W |
UNSPECIFIED |
POWER CONTROL |
1.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
510 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL APPROVED |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
8100 ns |
7 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
22 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
333 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
396 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST SWITCHING |
TO-220AB |
e3 |
60 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
208 W |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
22 ns |
GULL WING |
RECTANGULAR |
1 |
36 ns |
231 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
52 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
1900 ns |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
900 ns |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
72 W |
20 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
500 V |
4 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-258AA |
e0 |
300 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6500 W |
PLASTIC/EPOXY |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1800 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X7 |
1 |
ISOLATED |
900 ns |
UL APPROVED |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
YES |
1.8 W |
2.5 A |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
6.5 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
10 A |
METAL |
POWER CONTROL |
PIN/PEG |
SQUARE |
1 |
700 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
TIN LEAD |
SINGLE |
S-MSFM-P3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-254AA |
e0 |
150 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.97 V |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3900 W |
700 A |
UNSPECIFIED |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
1 |
590 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
260 |
180 ns |
|||||||||||||||||||||||
Infineon Technologies |
500 W |
70 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1600 V |
20 V |
||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
428 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
e3 |
24 ns |
AEC-Q101 |
|||||||||||||||||||
Infineon Technologies |
N-Channel |
1.32 V |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
600 ns |
31 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
170 ns |
||||||||||||||||||||||||||
Infineon Technologies |
12500 W |
2600 A |
3.1 V |
3 |
Insulated Gate BIP Transistors |
150 Cel |
1700 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
3000 W |
570 A |
UNSPECIFIED |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
660 ns |
18 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X18 |
ISOLATED |
Not Qualified |
e3 |
225 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1660 W |
400 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
930 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||
Infineon Technologies |
1400 W |
290 A |
3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
65 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
520 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
57 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
7 |
320 ns |
31 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
650 ns |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
190 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
835 W |
150 A |
2.3 V |
1 |
Insulated Gate BIP Transistors |
175 Cel |
1700 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
273 W |
85 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
313 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
SILICON |
1000 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
220 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
14800 W |
3700 A |
UNSPECIFIED |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1390 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
580 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
188 W |
55 A |
2.1 V |
215 ns |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
30 ns |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
515 W |
140 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
620 ns |
26 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL APPROVED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
675 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1600 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
NOT SPECIFIED |
260 |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
75 A |
725 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
80000 ns |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
695 W |
225 A |
UNSPECIFIED |
POWER CONTROL |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
4 |
330 ns |
26 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
691 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
900 V |
SINGLE |
R-PSFM-T3 |
NOT APPLICABLE |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
82 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.