Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGC99T120T6RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUP604

Infineon Technologies

N-CHANNEL

NO

300 W

80 A

120 ns

780 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

BSM50GD60DN2

Infineon Technologies

200 W

50 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

OM6516SCT

Infineon Technologies

N-CHANNEL

SINGLE

NO

25 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-258AA

e0

250 ns

IKU04N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

342 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-251

NOT SPECIFIED

NOT SPECIFIED

20 ns

BSM25GAL120D

Infineon Technologies

N-CHANNEL

NO

300 W

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

500 ns

FLANGE MOUNT

Other Transistors

SILICON

1200 V

UPPER

R-XUFM-X

ISOLATED

140 ns

F4-25R12NS4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

210 W

45 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

4

350 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IRGS4620DPBF

Infineon Technologies

N-CHANNEL

YES

140 W

32 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

FD200R65KF1KNOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

SILICON

6300 V

UPPER

R-XUFM-X7

ISOLATED

1120 ns

IGC142T120T8RH

Infineon Technologies

N-Channel

1.26 V

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

Q67040-S4595

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

16.1 ns

F4-250R17MP4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1030 ns

13

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

FF225R17ME4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1500 W

340 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1500 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

350 ns

F3L150R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

500 W

UNSPECIFIED

POWER CONTROL

1.75 V

UNSPECIFIED

RECTANGULAR

4

510 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FZ500R65KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

AIHD06N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

22 ns

AEC-Q101

IGP50N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

333 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

e3

60 ns

IRGS15B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

52 ns

FD800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1900 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

900 ns

OM6503SC

Infineon Technologies

N-CHANNEL

SINGLE

NO

72 W

20 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-258AA

e0

300 ns

FD1200R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

BSP280

Infineon Technologies

N-CHANNEL

YES

1.8 W

2.5 A

Insulated Gate BIP Transistors

150 Cel

1000 V

6.5 V

OM6509SAT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

10 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

700 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

150 ns

IGC99T120T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.97 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

FZ600R12KS4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3900 W

700 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

180 ns

BSM50GB160D

Infineon Technologies

500 W

70 A

1

Insulated Gate BIP Transistors

150 Cel

1600 V

20 V

IKD10N60RA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-252

e3

24 ns

AEC-Q101

IGC193T120T8RMX1SA2

Infineon Technologies

N-Channel

1.32 V

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

FP75R12N2T4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

600 ns

31

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X31

ISOLATED

170 ns

FD1200R17KF6C-B2

Infineon Technologies

12500 W

2600 A

3.1 V

3

Insulated Gate BIP Transistors

150 Cel

1700 V

20 V

F4-400R12KS4B2

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

3000 W

570 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

4

660 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

e3

225 ns

BSM200GB170DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1660 W

400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

BSM200GAL120DN2

Infineon Technologies

1400 W

290 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FS35R12W1T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

520 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

FP75R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

BSM300GAL120DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

190 ns

FS150R17N3E4BOSA1

Infineon Technologies

835 W

150 A

2.3 V

1

Insulated Gate BIP Transistors

175 Cel

1700 V

20 V

NOT SPECIFIED

NOT SPECIFIED

IKZ50N65NH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

313 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

30 ns

BSM300GA100D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

220 ns

FZ2400R12KL4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14800 W

3700 A

UNSPECIFIED

2.9 V

UNSPECIFIED

RECTANGULAR

3

1390 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

580 ns

AIGB30N65F5

Infineon Technologies

N-Channel

188 W

55 A

2.1 V

215 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

30 ns

FD800R17KF6CB2NOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

DDB6U180N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

IHY30N160R2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

260

IRGC14C40LB

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

370 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG5U75HH06E

Infineon Technologies

N-Channel

75 A

725 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

F4-200R06KL4

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

695 W

225 A

UNSPECIFIED

POWER CONTROL

2.55 V

UNSPECIFIED

RECTANGULAR

4

330 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X26

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

230 ns

IHW30N90TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

691 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

82 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.