Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

OM200L120CMA

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

950 ns

6

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

e0

IKZ75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

37 ns

GHP500HHBK06P2

Infineon Technologies

N-Channel

600 A

4050 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

7.5 V

1600 ns

IKP40N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

32 ns

IHW40T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

92 ns

Q67040-S4594

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

16.1 ns

IRG5K50FF06E

Infineon Technologies

N-Channel

50 A

2.1 V

350 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

IGC142T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

7

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N7

NOT SPECIFIED

NOT SPECIFIED

BUP400D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

22 A

PLASTIC/EPOXY

MOTOR CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

680 ns

750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

105 ns

F3L75R07W2E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

95 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

370 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

49 ns

IHY15N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

254 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IRGC50B120UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W33015NOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

FS150R07PE4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

660 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

IHW40N135R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.4 V

TIN

e3

IRGC4064B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

S-XUUC-N2

FS450R17OP4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

1080 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-XUFM-X29

ISOLATED

290 ns

IEC-61140; UL RECOGNIZED

IKZ75N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

70 ns

IRG8CH50K10F

Infineon Technologies

N-CHANNEL

50 A

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6.5 V

BSM50GAL120D

Infineon Technologies

N-CHANNEL

NO

500 W

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

600 ns

FLANGE MOUNT

Other Transistors

SILICON

1200 V

UPPER

R-XUFM-X

ISOLATED

170 ns

F3L400R07PE4_B26

Infineon Technologies

N-Channel

COMPLEX

NO

1200 W

460 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

4

650 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL APPROVED

FZ2400R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10000 W

3200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

1140 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

890 ns

RGR3B60KD2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7.8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

211 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

35 ns

FP30R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

BUP400

Infineon Technologies

N-CHANNEL

NO

100 W

22 A

90 ns

680 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

GA600HD25S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1780 ns

5

FLANGE MOUNT

SILICON

250 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

2010 ns

IGC50T120T8RLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N3

BSM20GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

7

310 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

FS450R17OP4P

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

1080 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-XUFM-X29

ISOLATED

290 ns

IEC-61140; UL RECOGNIZED

IGC70T120T8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

BSM300GB120DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

DDB6U180N16RRB37BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

IRG5K150HF06A

Infineon Technologies

N-Channel

150 A

2.1 V

695 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

165000 ns

IRGIB4620DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

143 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

48 ns

IGC109T120T8RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1200 V

-40 Cel

UPPER

R-XUUC-N5

FP75R07N2E4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

IGC15T60QX1SA1

Infineon Technologies

N-Channel

2.32 V

175 Cel

SILICON

600 V

-40 Cel

20 V

5.6 V

IRG5K100HH06E

Infineon Technologies

N-Channel

100 A

2.1 V

575 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

125000 ns

DDB6U30N08VRBOMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

26 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

145 ns

9

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

38 ns

IRGS6B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

13 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

258 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

45 ns

FS35R12W1T7

Infineon Technologies

N-Channel

1.74 V

640 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

ISOLATED

82 ns

IRGS4630DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

65 ns

FZ800R17KF6B2

Infineon Technologies

7300 W

1600 A

3.2 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

FZ600R65KF2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

600 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

3

6500 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

IGB15N65S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

105 W

35 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

27 ns

FZ2400R17KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FS225R17OE4BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1450 W

350 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

870 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

UL APPROVED

IGC07R60DX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.