Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS150R12PT4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

680 W

200 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X20

1

ISOLATED

Not Qualified

260

190 ns

IHW30N120R2XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

IGC70T120T8RQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

FS225R12KE3BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

325 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

810 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

Q67041-A4686-A003

Infineon Technologies

N-Channel

2.6 V

420 ns

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

110 ns

CPU165MU

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

83 W

33 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

ULTRA FAST

e0

IKWH20N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

272 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

38 ns

Q67050-A4151-A001

Infineon Technologies

N-Channel

2.4 V

1100 ns

150 Cel

SILICON

1700 V

-55 Cel

20 V

6.4 V

450 ns

IGC41T120T8QX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FZ1600R17KF6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

12500 W

2600 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

2

1360 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

490 ns

IKP08N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

18 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

15 ns

IKP04N60THKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

207 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SWITCHING SPEED

TO-220AB

21 ns

AIHD15N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

240 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

260

30 ns

AEC-Q101

BSM50GD60DN2E3226

Infineon Technologies

200 W

50 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IGC109T120T6RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

110 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

4

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGS14C40L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

SILICON

370 V

SINGLE

R-PSSO-G2

1

LOW SATURATION VOLTAGE

TO-263AB

3700 ns

OM6505SA

Infineon Technologies

N-CHANNEL

SINGLE

NO

72 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

BSM200GA120D

Infineon Technologies

1700 W

200 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

OM400F120CMS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

900 ns

4

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

e0

420 ns

DDB6U134N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IRG5K100HF06A

Infineon Technologies

N-Channel

100 A

2.1 V

575 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

125000 ns

BUP212

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

22 A

PLASTIC/EPOXY

MOTOR CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

120 ns

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

105 ns

IGC114T170S8RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IGC99T120T8RLX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.97 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

OM300L60CMD

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1150 ns

7

FLANGE MOUNT

SILICON

600 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1200 ns

BSM200GB120DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

290 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

630 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FP75R12N2T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

199 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRG5U150HF06A

Infineon Technologies

N-Channel

150 A

2.9 V

835 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

115000 ns

FZ2400R17HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

1010 ns

FB10R06W1E3ENG

Infineon Technologies

N-Channel

68 W

18 A

2 V

260 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

ISOLATED

26 ns

IRGS14C40LTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

LOW SATURATION VOLTAGE

TO-263AB

e3

3700 ns

IKP01N120H2HKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

493 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

20.9 ns

IHW30N120R3FKSA1

Infineon Technologies

N-CHANNEL

NO

349 W

60 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.4 V

TIN

e3

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL APPROVED

IRGCH50FE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

FZ2400R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FZ1800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2850 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

DF400R07PE4RB6BOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

2A200HB17C2L

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1150 W

280 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

730 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

290 ns

FZ1600R17KF6B2

Infineon Technologies

12500 W

1600 A

3.1 V

2

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

IRGCC40KE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

e0

IKW03N120H2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

OM6520SCT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-258AA

e0

250 ns

IKD15N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

260

30 ns

6MS10017E41W36460

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IGC10T65QE

Infineon Technologies

N-Channel

2.32 V

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

F3L400R12PT4PB26BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

IKB40N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

79 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

204 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

36 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.