Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BSM200GA120DL

Infineon Technologies

1400 W

360 A

2.6 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BSM20GD60DLC

Infineon Technologies

125 W

20 A

2.45 V

1

Insulated Gate BIP Transistors

125 Cel

600 V

20 V

1

260

CPU165MUPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T10

ISOLATED

ULTRA FAST

NOT SPECIFIED

NOT SPECIFIED

FF1200R17IP5

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1200 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

970 ns

10

FLANGE MOUNT

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

460 ns

FP75R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FZ600R17KE3_S4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

840 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1200 ns

5

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL RECOGNIZED

BUP403

Infineon Technologies

N-CHANNEL

NO

200 W

120 ns

700 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

F3L400R10W3S7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

235 A

UNSPECIFIED

1.61 V

UNSPECIFIED

RECTANGULAR

6

311 ns

18

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X18

ISOLATED

111 ns

IEC-61140

DF100R07W1H5FPB54BPSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

2

30 ns

14

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X14

ISOLATED

12.6 ns

IEC-61140

BSM50GB60DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

75 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

IGC142T120T6RH

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

8

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGS4715DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

21 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

2 V

GULL WING

RECTANGULAR

1

30 ns

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

80 ns

-40 Cel

30 V

150 ns

7.4 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

50 ns

IFS100B12N3E4B39BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X34

ISOLATED

210 ns

UL RECOGNIZED

IRGC15B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

BSM300GA120DLCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2270 W

570 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

OM400L60CMC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1150 ns

7

FLANGE MOUNT

SILICON

600 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1200 ns

AIHD06N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

22 ns

AEC-Q101

IGC31T65QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

BSM200GB120DL

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

340 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

640 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

240 ns

F4-50R12MS4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

70 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

4

390 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1250 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1210 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

460 ns

DF200R12PT4B6BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

AIKB40N65DH5

Infineon Technologies

N-Channel

250 W

74 A

2.1 V

200 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

24 ns

IRGSL6B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 W

13 A

PLASTIC/EPOXY

MOTOR CONTROL

26 ns

2.2 V

THROUGH-HOLE

RECTANGULAR

1

27 ns

258 ns

3

IN-LINE

150 Cel

SILICON

600 V

63 ns

-55 Cel

20 V

282 ns

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

45 ns

F3L80R12W1H3_B11

Infineon Technologies

N-Channel

275 W

90 A

1.95 V

425 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP25R12KS4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

40 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

7

460 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

FS300R17OE4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

YES

1850 W

450 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

910 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

385 ns

UL APPROVED

IKZ50N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

311 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

27 ns

IHY30N160R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1600 V

20 V

6.4 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

260

BSM200GA160D

Infineon Technologies

1750 W

275 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

1600 V

20 V

BSM50GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

70 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

151 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

52 ns

FP20R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

27 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FZ1800R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1600 ns

9

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

IRGSL6B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

45 ns

IGC54T65R3QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

BSM200GA170DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

FZ2400R12KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

890 ns

IKB30N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

200 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

52 ns

FZ2400R17HE4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

1

ISOLATED

760 ns

FZ1600R17HP4

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

10500 W

1600 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

260

750 ns

FF225R12MS4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1450 W

275 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

2

590 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

IGC99T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.97 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

F3L400R12PT4P_B26

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

IFS150B17N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

760 ns

37

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X37

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

ILA03N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16.5 W

3 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

3.9 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 ns

F3L100R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

465 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

175 ns

UL APPROVED

IGC27T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG5U300HF12B

Infineon Technologies

N-Channel

300 A

3.5 V

895 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

175000 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.