Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

6MS30017E43W38169

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FS300R16KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

300 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

6

1600 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

TIN LEAD

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

e0

1000 ns

IGC76T65T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1.23 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

FD1000R33HE3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

IRGAC30U

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

FZ400R17KE3HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1230 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

IFS100B12N3T4_B31

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

165 ns

UL RECOGNIZED

FD800R45KL3KB5NPSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7350 ns

9

FLANGE MOUNT

SILICON

4500 V

-50 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FZ800R12KS4B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

FZ400R12KS4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

510 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

IGC189T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.27 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

F3L400R07ME4_B23

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

758 ns

11

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

IRGS4056DTRRPBF

Infineon Technologies

N-CHANNEL

YES

140 W

24 A

PLASTIC/EPOXY

24 ns

GULL WING

RECTANGULAR

31 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

600 V

30 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

F430R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

DF100R07W1H5FPB54BPSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

2

30 ns

14

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

12.6 ns

IEC-61140

BSM30GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

70 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FP25R12W1T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

359 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

57 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

IGC28T65QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

BUP307

Infineon Technologies

N-CHANNEL

NO

310 W

35 A

200 ns

300 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IFS150B12N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

240 ns

UL RECOGNIZED

IGC99T120T6RLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Q67050-A4050-A001

Infineon Technologies

N-Channel

3.7 V

460 ns

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

110 ns

FS3L50R07W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

12

243 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

81 ns

CPU165MFPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T10

ISOLATED

FAST

NOT SPECIFIED

NOT SPECIFIED

IRG5K75HF06A

Infineon Technologies

N-Channel

75 A

2.1 V

360 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

90000 ns

IRGC2B60KB

Infineon Technologies

N-CHANNEL

Insulated Gate BIP Transistors

600 V

6 V

IKP04N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

207 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-220AB

e3

21 ns

RGR3B60KD2TRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7.8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

211 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

35 ns

OM6502STV

Infineon Technologies

N-CHANNEL

SINGLE

NO

10 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

700 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-257AA

e0

150 ns

IRGS4B60KTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

40 ns

BSM35GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

105 ns

AIKB30N65DH5

Infineon Technologies

N-Channel

188 W

55 A

2.1 V

215 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

30 ns

OM6517SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IHW30N120R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

FZ2400R17HP4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14000 W

2400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

930 ns

IKU15N60RBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

26 ns

IRG8P25N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

585 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

40 ns

IHW30N135R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

680 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

Q67050-A4160-A001

Infineon Technologies

N-Channel

2.5 V

205 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

90 ns

FZ200R65KF2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

IRGCH50FEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IGC04R60D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FZ1600R17HP4NPSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

750 ns

IKA08N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

10.8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

6MS30017E43W40372

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

BSM30GD60DN2E3224

Infineon Technologies

125 W

30 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

BSM25GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

25 A

UNSPECIFIED

3 V

UNSPECIFIED

RECTANGULAR

2

470 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FZ1800R17HP4B29BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.