Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
580 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
35 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
MICROELECTRONIC ASSEMBLY |
SILICON |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
Not Qualified |
40 |
260 |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
305 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
228 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
105 W |
30 A |
2.1 V |
201 ns |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
27 ns |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
138 W |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
769 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
69 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
17 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
540 ns |
28 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
310 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
206 W |
47 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
65 ns |
||||||||||||||||||||||
Infineon Technologies |
N-Channel |
188 ns |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
15 ns |
||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
237 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
TO-262 |
e0 |
74 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
80 W |
25 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
192 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
68 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
5 A |
METAL |
POWER CONTROL |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
SILICON |
500 V |
TIN LEAD |
SINGLE |
S-MSFM-P3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-257AA |
e0 |
187 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
35 A |
2.6 V |
550 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
50000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
10 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
430 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
19500 W |
2.25 V |
2095 ns |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
1 |
ISOLATED |
945 ns |
|||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
ROUND |
1 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
O-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
63 W |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
89 ns |
199 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-262 |
e3 |
30 |
260 |
40 ns |
|||||||||||||||
|
Infineon Technologies |
N-Channel |
150 Cel |
SILICON |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
32 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
321 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
59 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
198 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
27 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
115 W |
37 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
245 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
2735 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1160 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X9 |
1 |
ISOLATED |
720 ns |
UL APPROVED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31.2 W |
10.8 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
16 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
600 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
3200 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
FAST |
e0 |
1260 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
1400 W |
300 A |
3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
6 |
FLANGE MOUNT |
SILICON |
1200 V |
TIN LEAD |
UPPER |
R-XUFM-X6 |
ISOLATED |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
18 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
262 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
NOT APPLICABLE |
ISOLATED |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
296 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
21 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
325 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
810 ns |
11 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
280 W |
50 A |
3.2 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
22 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
276 ns |
3 |
IN-LINE |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
TO-262 |
e0 |
50 ns |
||||||||||||||||||||||||||
Infineon Technologies |
30 W |
5 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
1000 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
490 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X4 |
1 |
ISOLATED |
Not Qualified |
185 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
22 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
120 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
14.2 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
ROUND |
1 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
O-XUUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
900 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
6 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X6 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
395 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
232 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
61 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
6600 W |
1700 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
2100 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1050 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
35 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
13 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
258 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
88 W |
6 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
249 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
260 |
17 ns |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
150 W |
35 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
FAST |
TO-254AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
996 ns |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
40 |
260 |
958 ns |
UL APPROVED |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
100 W |
12 A |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.