Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG8P15N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

580 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

35 ns

CPA100T56A18BA4-12

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

Not Qualified

40

260

IHW40N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

AIGB15N65H5

Infineon Technologies

N-Channel

105 W

30 A

2.1 V

201 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

27 ns

IHP10T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

138 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

769 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

69 ns

IKA06N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

IFF300B12N2E4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

540 ns

28

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

UL RECOGNIZED

IRGS4630DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

65 ns

IGD06N60TBUMA1

Infineon Technologies

N-Channel

188 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

15 ns

IRGSL30B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

237 ns

3

IN-LINE

175 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262

e0

74 ns

FB20R06KL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 W

25 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

192 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

68 ns

OM6501STT

Infineon Technologies

N-CHANNEL

SINGLE

NO

5 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-257AA

e0

187 ns

IRG5K35HF12A

Infineon Technologies

N-Channel

35 A

2.6 V

550 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

50000 ns

FF1200R12IE5PBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

680 ns

10

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

430 ns

FZ3600R17HP4B2BOSA2

Infineon Technologies

N-Channel

19500 W

2.25 V

2095 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

1

ISOLATED

945 ns

IRGC30B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGSL4B60KD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

THROUGH-HOLE

RECTANGULAR

1

89 ns

199 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-262

e3

30

260

40 ns

IFS200V12PT4BOSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

NOT SPECIFIED

NOT SPECIFIED

IGB15N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

32 ns

IHW40N65R5S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

321 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

59 ns

AIHD10N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

198 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

27 ns

AEC-Q101

FP30R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL RECOGNIZED

FZ1800R12HE4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2735 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1160 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

1

ISOLATED

720 ns

UL APPROVED

IKA08N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

10.8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

130 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

16 ns

G450HHBK06P2H

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

3200 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

FAST

e0

1260 ns

BSM200GT120DN2

Infineon Technologies

1400 W

300 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FP75R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

OM150F120CMA

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

6

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

e0

IGA30N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IKP10N60THKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

21 ns

FF225R12ME3BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

325 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

810 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

BSM35GD120D2

Infineon Technologies

280 W

50 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

IRGSL10B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

276 ns

3

IN-LINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262

e0

50 ns

BSM05GD100D

Infineon Technologies

30 W

5 A

2.8 V

1

Insulated Gate BIP Transistors

1000 V

FD150R12RT4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

490 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

185 ns

FS35R12YT3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X22

ISOLATED

120 ns

IKA03N120H2XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

14.2 ns

F4-50R12KS4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

IRGC15B120UBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

1200 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

DF900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

900 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1300 ns

6

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

IGW75N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

395 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

FF1200R17KE3_B2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

6600 W

1700 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

2100 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

IRGMC50FDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRGSL6B60KDTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

45 ns

IGD06N60T

Infineon Technologies

N-CHANNEL

SINGLE

YES

88 W

6 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

249 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

260

17 ns

IRGMC50FD

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

GA250TD120U

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

250 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

996 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

958 ns

UL APPROVED

BUP302

Infineon Technologies

N-CHANNEL

NO

100 W

12 A

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.