Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGMIC50U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

GENERAL PURPOSE SWITCHING

PIN/PEG

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

40

260

51 ns

FZ2000R33HE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2000 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4880 ns

9

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

ISOLATED

960 ns

CT175T91A18BW4-12

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

Not Qualified

40

260

CT130T56A18BW4-12

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

Not Qualified

40

260

IFS100B12N3E4_B39

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

515 W

100 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

IRGMC30UD

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

17 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

FD800R17HP4-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5350 W

800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

2000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

670 ns

IRG5K75HH06E

Infineon Technologies

N-Channel

75 A

2.1 V

360 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

90000 ns

IRGC4056B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

S-XUUC-N2

IGC10T60Q

Infineon Technologies

N-Channel

2.32 V

175 Cel

SILICON

600 V

-40 Cel

20 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

FD600R16KF4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

1

1250 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FF75R12RT4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

395 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

490 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

185 ns

IRG8CH76K10F

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

1

555 ns

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

UNSPECIFIED

R-XXUC-N

100 ns

AIKW50N65DH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IRGC10B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRGS4045DTRRPBF

Infineon Technologies

N-CHANNEL

YES

77 W

12 A

22 ns

22 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

1

DF75R12W1H4FB11BOMA1

Infineon Technologies

N-Channel

230 W

50 A

2.65 V

500 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

IHY15N120R3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IRGC8B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

SILICON

1200 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IKZ75N65EL5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

474 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

133 ns

IRGC25B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGMC30UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

Q67050-A4048-A001

Infineon Technologies

N-Channel

3.6 V

1040 ns

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

96 ns

FS150R07PE4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

660 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

Q67041-A4672-A002

Infineon Technologies

N-Channel

2.5 V

382 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

49 ns

F4-150R17ME4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

230 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

780 ns

13

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

IRGCC50MEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

FP25R12W2T4ENG

Infineon Technologies

N-Channel

175 W

39 A

2.25 V

520 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

ISOLATED

47 ns

IFF300B17N2E4P_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

1500 W

400 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

830 ns

26

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL APPROVED

GW75N65H5

Infineon Technologies

N-Channel

395 W

120 A

2.1 V

196 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

NOT SPECIFIED

NOT SPECIFIED

39 ns

FD250R65KE3-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1200 ns

UL APPROVED

IKB20N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

260

31 ns

DDB6U50N08XR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

FD600R17KF6C_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4800 W

975 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

1

1220 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

470 ns

FZ1800R45HL4_S7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

25 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

FD800R45KL3-K_B5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 A

PLASTIC/EPOXY

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

1

7350 ns

9

FLANGE MOUNT

125 Cel

SILICON

4500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

820 ns

FD800R33KL2CKB5NOSA1

Infineon Technologies

DF1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

GA200SA60SP

Infineon Technologies

630 W

200 A

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IKWH60N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

334 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

63 ns

IHW40N120R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.4 V

TIN

e3

DDB6U100N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

350 W

50 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

F3L100R07W2E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

300 W

117 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

345 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

FB20R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

29 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FD900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1300 ns

8

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

IRGC9B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

BSM400GA170DLS

Infineon Technologies

3120 W

800 A

3.3 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.