Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 A |
METAL |
GENERAL PURPOSE SWITCHING |
PIN/PEG |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-259AA |
40 |
260 |
51 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
2000 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
4880 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
3300 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
960 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
MICROELECTRONIC ASSEMBLY |
SILICON |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
Not Qualified |
40 |
260 |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
MICROELECTRONIC ASSEMBLY |
SILICON |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
Not Qualified |
40 |
260 |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
515 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
34 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-254AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
5350 W |
800 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
1 |
2000 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
670 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
75 A |
2.1 V |
360 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
90000 ns |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
6.5 V |
UPPER |
S-XUUC-N2 |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
2.32 V |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.6 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 A |
UNSPECIFIED |
3.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1250 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1600 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
800 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
395 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
490 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
260 |
185 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
555 ns |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
6.5 V |
UNSPECIFIED |
R-XXUC-N |
100 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
AEC-Q101 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
ROUND |
1 |
UNCASED CHIP |
SILICON |
600 V |
TIN LEAD |
UPPER |
O-XUUC-N |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
77 W |
12 A |
22 ns |
22 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
1 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
230 W |
50 A |
2.65 V |
500 ns |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
58 ns |
|||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
460 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
ROUND |
1 |
2 |
UNCASED CHIP |
SILICON |
1200 V |
TIN LEAD |
UPPER |
O-XUUC-N |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
536 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
474 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.8 V |
TIN |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
e3 |
133 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
ROUND |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
SILICON |
1200 V |
6 V |
UPPER |
O-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
3.6 V |
1040 ns |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
96 ns |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
660 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.5 V |
382 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
49 ns |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
230 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
780 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
270 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
FAST SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
175 W |
39 A |
2.25 V |
520 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
ISOLATED |
47 ns |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR |
NO |
1500 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
830 ns |
26 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
395 W |
120 A |
2.1 V |
196 ns |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
8100 ns |
7 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
UL APPROVED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
241 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
260 |
31 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
30 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X |
|||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
105 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
4800 W |
975 A |
UNSPECIFIED |
POWER CONTROL |
3.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1220 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
470 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1800 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
3 |
8060 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
4500 V |
-40 Cel |
25 V |
6.5 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
470 ns |
IEC-60747; IEC-60749; IEC-60068 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
800 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
1 |
7350 ns |
9 |
FLANGE MOUNT |
125 Cel |
SILICON |
4500 V |
-50 Cel |
20 V |
6.6 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
820 ns |
||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||
|
Infineon Technologies |
630 W |
200 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
240 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.85 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
334 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
63 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
429 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
20 V |
6.4 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
350 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
300 W |
117 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
4 |
345 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
95 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
29 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
250 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
8 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
Infineon Technologies |
3120 W |
800 A |
3.3 V |
1 |
Insulated Gate BIP Transistors |
125 Cel |
1700 V |
20 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.