Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BSM50GAL120DN2

Infineon Technologies

400 W

76 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BUP202

Infineon Technologies

N-CHANNEL

NO

100 W

12 A

200 ns

300 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IGC99T120T6RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FF800R12KE3

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3900 W

1200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

1140 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

880 ns

FZ2400R17HP4B29BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

665 ns

FD600R06ME3B11S2BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

960 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

275 ns

FZ800R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

2.7 V

UNSPECIFIED

RECTANGULAR

2

1050 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ3600R17HE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2245 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

1075 ns

UL APPROVED

FS3L25R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

12

295 ns

34

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

DDB6U134N16RR_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

400 W

125 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

510 ns

19

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL APPROVED

IKU10N60RBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

24 ns

FD800R33KF2

Infineon Technologies

9600 W

1300 A

4.25 V

1

Insulated Gate BIP Transistors

125 Cel

3300 V

20 V

IRGS4062DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

64 ns

BSM25GAL100D

Infineon Technologies

300 W

25 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

OM6508SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

5 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

187 ns

BUP313D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

32 A

PLASTIC/EPOXY

MOTOR CONTROL

70 ns

THROUGH-HOLE

RECTANGULAR

1

95 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-218

e3

70 ns

FD200R65KF2-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

1000 A

UNSPECIFIED

POWER CONTROL

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

6MS30017E43W33015

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

FP75R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

350 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FS35R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

210 W

55 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FB15R06KL4B1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

249 ns

26

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X26

ISOLATED

71 ns

DF100R07W1H5FPB53BPSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

40 ns

26

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X26

ISOLATED

17 ns

FF500R17KE4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

890 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

UL APPROVED

BSM400GA120DLCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

625 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKWH30N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

53 ns

IGC189T120T8RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.27 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IRGS15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e0

30

225

52 ns

FF225R12ME4B11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

320 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

UL APPROVED

RGR3B60KD2TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7.8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

211 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

TO-252AA

e3

35 ns

FZ1600R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7800 W

2300 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

1140 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

880 ns

FZ750R65KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

NO

14500 W

750 A

UNSPECIFIED

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6500 V

20 V

UPPER

R-XUFM-X9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FB15R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

81 W

24 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

IHW40T60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

IGC70T120T8RLX1SA3

Infineon Technologies

N-Channel

2.07 V

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

IRGC75B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

OM6504SC

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

30 A

METAL

POWER CONTROL

200 ns

PIN/PEG

RECTANGULAR

1

2000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-258AA

e0

100 ns

IGC07T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.02 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGKI0025M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

25 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

OM200F120CMA

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

840 ns

6

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

e0

315 ns

IGW75N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FZ1600R17KF6CB2NOSA1

Infineon Technologies

N-Channel

12500 W

2600 A

3.1 V

1360 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

490 ns

AIHD10N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

24 ns

AEC-Q101

FS15R06VL4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80.5 W

20 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

115 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

22 ns

DDB6U134N16RRBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM20GD60DN2

Infineon Technologies

90 W

20 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IHW30N100T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

412 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

130 ns

702 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1000 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

90 ns

IKP15N60THKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED

TO-220AB

32 ns

FS600R07A2E3BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

530 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

6

540 ns

33

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.