Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGU04N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

9.5 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

IN-LINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e3

24 ns

AIGW50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

33 ns

AEC-Q101

BSM50GB120DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

78 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

450 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IRGSL15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

THROUGH-HOLE

RECTANGULAR

1

36 ns

231 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-262

e3

40

260

52 ns

IFF300B17N2E4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

830 ns

26

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

IGC99T120T6RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG8CH29K10F

Infineon Technologies

N-CHANNEL

25 A

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6.5 V

IRG5U75HH12E

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

540 W

130 A

UNSPECIFIED

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

4

630 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

FZ2400R17HP4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14000 W

2400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

1010 ns

FS300R12OE4PNOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

650 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

UL RECOGNIZED

6PS04012E4DG36022NOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

DDB6U180N16RR_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

F3L75R12W1H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

IRG6B330UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

30 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

83 ns

OM6526SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IGB15N65S5

Infineon Technologies

N-CHANNEL

SINGLE

YES

105 W

35 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

27 ns

DDB6U134N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FP75R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

F3L200R12N2H3_B47

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

520 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

253 ns

FD650R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

4150 W

930 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

OM60L60SB

Infineon Technologies

250 W

75 A

1.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

FZ600R12KE3B1HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

900 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

F450R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FZ400R65KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

125 Cel

SILICON

6500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1200 ns

Q67041-A4700-A001

Infineon Technologies

N-Channel

2.6 V

370 ns

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

110 ns

FB10R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

18 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

FF225R12ME3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1150 W

325 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

810 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

FZ400R17KE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

550 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

1

930 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

355 ns

IRGS14B40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

18 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

175 Cel

SILICON

SINGLE

R-PSSO-G2

VOLTAGE CLAMPING

NOT SPECIFIED

NOT SPECIFIED

IRGIB15B60KD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

19 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

IRGC5B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGNI0050M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

50 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IRGS4062DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

64 ns

IGC06R60DEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

IHD06N60RAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

325 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e3

FD1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

IGC70T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

FS6R06VE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40.5 W

11 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

CT110T41A18BW4-12

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

Not Qualified

40

260

IRPT1053A

Infineon Technologies

1

Insulated Gate BIP Transistors

125 Cel

Tin/Lead (Sn/Pb)

e0

IGC168T170S8RMX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM25GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

140 ns

6MS30017E43W40372NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IHW30N120R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1216 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

121 ns

Q67040-S4597

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

16.1 ns

FS35R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

55 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

OM6505SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

2ED300C17-S

Infineon Technologies

N-Channel

85 Cel

SILICON

-25 Cel

1

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.