Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
3550 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1440 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
880 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
FAST SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
199 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
6 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N6 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
3 |
6500 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
6300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1120 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
1160 ns |
30 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.25 V |
UPPER |
R-XUFM-X30 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
270 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 A |
METAL |
PIN/PEG |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-MSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-259AA |
NOT SPECIFIED |
NOT SPECIFIED |
51 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
170 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
241 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
260 |
31 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
21 A |
PLASTIC/EPOXY |
POWER CONTROL |
30 ns |
2 V |
GULL WING |
RECTANGULAR |
1 |
30 ns |
120 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
80 ns |
-40 Cel |
30 V |
150 ns |
7.4 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
50 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
75 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
346 ns |
32 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
460 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
240 ns |
IEC-61140; UL RECOGNIZED |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
TIN LEAD |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
570 W |
180 A |
UNSPECIFIED |
POWER CONTROL |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
270 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
160 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2700 W |
550 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
630 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
2.3 V |
150 Cel |
SILICON |
1700 V |
-40 Cel |
ISOLATED |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
600 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
2.22 V |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.6 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
500 W |
72 A |
UNSPECIFIED |
POWER CONTROL |
3.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
740 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
500 ns |
||||||||||||||||||||||
Infineon Technologies |
N-Channel |
100 A |
2.9 V |
920 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
100000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
COMPLEX |
NO |
190 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
53.6 W |
6.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
265 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
18 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-262AA |
e3 |
3700 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
5.55 V |
55300 ns |
150 Cel |
SILICON |
-40 Cel |
20 V |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
14100 ns |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.2 V |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1500 W |
700 A |
UNSPECIFIED |
POWER CONTROL |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
690 ns |
33 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
8100 ns |
9 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
UL APPROVED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
45 A |
METAL |
PIN/PEG |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-MSFM-P3 |
ISOLATED |
FAST |
TO-259AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE |
NO |
14000 W |
3450 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1900 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
900 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
428 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
24 ns |
AEC-Q101 |
|||||||||||||||||||||
Infineon Technologies |
N-Channel |
1250 W |
375 A |
402 ns |
125 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
ISOLATED |
176 ns |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
10 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
6.4 V |
UPPER |
R-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 A |
METAL |
PIN/PEG |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-MSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-259AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
428 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
69 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
4 |
520 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
253 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
303 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
272.5 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.75 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
484 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
375 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 W |
55 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
370 W |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
39 ns |
GULL WING |
RECTANGULAR |
1 |
42 ns |
237 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
74 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
125 W |
37 A |
UNSPECIFIED |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
750 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
94 W |
29 A |
2 V |
250 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
37 ns |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
385 W |
2.15 V |
570 ns |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
ISOLATED |
185 ns |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
ROUND |
1 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
O-XUUC-N |
ULTRA FAST |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
225 W |
65 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
520 ns |
18 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X18 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
57 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
31 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.