Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGS4B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

40 ns

IRGMC30FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

23 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IGC36T120T8LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

1200 V

-40 Cel

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

F3L80R12W1H3B11BOMA1

Infineon Technologies

N-Channel

275 W

90 A

1.95 V

425 ns

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

210 ns

IRG5U400SD12B

Infineon Technologies

N-Channel

400 A

3.5 V

1160 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

160000 ns

IFF600B12ME4B11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

750 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

Q67050-A4221-A101

Infineon Technologies

N-Channel

3.15 V

98 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

17 ns

IFS150V12PT4BOSA1

Infineon Technologies

N-Channel

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC

YES

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

5

MICROELECTRONIC ASSEMBLY

65 Cel

SILICON

1200 V

-40 Cel

UNSPECIFIED

R-XXMA-X5

ISOLATED

PM15CMA060

Infineon Technologies

22 W

15 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

F4-100R17ME4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

155 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

790 ns

13

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

260 ns

IKD15N60RBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

26 ns

IGC54T65T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1.82 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

Q67041-A4672-A003

Infineon Technologies

N-Channel

2.5 V

382 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

49 ns

FS225R12KE3_S1

Infineon Technologies

N-Channel

1150 W

325 A

2.15 V

810 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

400 ns

IHW30N160R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IRGKI0075M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IFS75B12N3T4_B31

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

BSM200GB170DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

BSM300GA120DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

570 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF800R17KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1150 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

900 ns

Q67041-S2856-A001

Infineon Technologies

N-Channel

2.5 V

376 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

82 ns

BUP200

Infineon Technologies

N-CHANNEL

NO

50 W

5 A

200 ns

300 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IRG5U75HF06A

Infineon Technologies

N-Channel

75 A

2.9 V

725 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

IKD15N60RA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252

e3

26 ns

AEC-Q101

DF200R12W1H3F_B11

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

1.45 V

PIN/PEG

RECTANGULAR

2

475 ns

18

PRESS-FIT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

BOTTOM

R-XBPF-P18

LOW SWITCHING LOSSES

27 ns

BSM200GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FS800R07A2E3BOSA4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

690 ns

33

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X33

ISOLATED

230 ns

FZ400R12KE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

810 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

370 ns

FP30R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

BUP311D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-218AB

e3

105 ns

IFF2400P17LE4BPSA1

Infineon Technologies

N-Channel

2.3 V

150 Cel

SILICON

1700 V

-40 Cel

1

ISOLATED

FS15R06VE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 W

22 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

F3L400R07ME4_B22

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

780 ns

11

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

255 ns

UL RECOGNIZED

FZ2400R12HP4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

13500 W

3550 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

880 ns

BSM50GB120DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

460 W

115 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

2

370 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

FD800R33KF2C-K

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1300 A

UNSPECIFIED

POWER CONTROL

4.25 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

FS150R12N2T7

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

150 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

6

436 ns

32

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

UL RECOGNIZED

222 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IGC89T170S8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM300GAR120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

625 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRGTI0075M12

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

F4-100R06KL4

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

430 W

130 A

UNSPECIFIED

POWER CONTROL

2.55 V

UNSPECIFIED

RECTANGULAR

4

180 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

36 ns

AIGW40N65F5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

30 ns

AEC-Q101

FZ2400R17KF6CB2NOSA1

Infineon Technologies

N-Channel

18000 W

3800 A

3.1 V

1690 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

530 ns

IFS75B12N3E4_B32

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

IRGSL15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

IN-LINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-262

e0

52 ns

BSM30GD60DN2

Infineon Technologies

125 W

30 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IRGC4066B

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.