Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
23 ns |
GULL WING |
RECTANGULAR |
1 |
89 ns |
199 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
40 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
23 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
FAST |
TO-254AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
275 W |
90 A |
1.95 V |
425 ns |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
210 ns |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
400 A |
3.5 V |
1160 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
160000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
750 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
3.15 V |
98 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
17 ns |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
5 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
SILICON |
1200 V |
-40 Cel |
UNSPECIFIED |
R-XXMA-X5 |
ISOLATED |
|||||||||||||||||||||||||||||
Infineon Technologies |
22 W |
15 A |
2.7 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
155 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
790 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
260 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
430 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
26 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
1.82 V |
NO LEAD |
RECTANGULAR |
1 |
9 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N9 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.5 V |
382 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
49 ns |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
1150 W |
325 A |
2.15 V |
810 ns |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
400 ns |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
263 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
411 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1600 V |
-40 Cel |
20 V |
5.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
NO |
75 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
FAST |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
385 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
34 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
185 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
400 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
930 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
570 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
650 ns |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1150 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1900 ns |
10 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
1 |
ISOLATED |
Not Qualified |
900 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.5 V |
376 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
82 ns |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
50 W |
5 A |
200 ns |
300 ns |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
75 A |
2.9 V |
725 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
80000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
30 A |
PLASTIC/EPOXY |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
430 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
e3 |
26 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
1.45 V |
PIN/PEG |
RECTANGULAR |
2 |
475 ns |
18 |
PRESS-FIT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
BOTTOM |
R-XBPF-P18 |
LOW SWITCHING LOSSES |
27 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
550 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
630 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
700 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
690 ns |
33 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
230 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2400 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
810 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X3 |
1 |
ISOLATED |
Not Qualified |
260 |
370 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
115 W |
37 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
245 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
460 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-218AB |
e3 |
105 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
2.3 V |
150 Cel |
SILICON |
1700 V |
-40 Cel |
1 |
ISOLATED |
||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
65 W |
22 A |
UNSPECIFIED |
2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
260 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
29 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1000 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
450 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
780 ns |
11 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
255 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
13500 W |
3550 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1440 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
Not Qualified |
880 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
460 W |
115 A |
UNSPECIFIED |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
370 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
9600 W |
1300 A |
UNSPECIFIED |
POWER CONTROL |
4.25 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1900 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
480 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
436 ns |
32 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
UL RECOGNIZED |
222 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
SILICON |
1700 V |
UPPER |
R-XUUC-N5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2500 W |
625 A |
UNSPECIFIED |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
650 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
FAST |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
430 W |
130 A |
UNSPECIFIED |
POWER CONTROL |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
4 |
180 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
36 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
30 ns |
AEC-Q101 |
||||||||||||||||||||
Infineon Technologies |
N-Channel |
18000 W |
3800 A |
3.1 V |
1690 ns |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
530 ns |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
385 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
570 ns |
34 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
185 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
231 ns |
3 |
IN-LINE |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
ULTRA FAST |
TO-262 |
e0 |
52 ns |
|||||||||||||||||||||||||
Infineon Technologies |
125 W |
30 A |
2.7 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
75 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.