Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FD900R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

5100 W

900 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X8

1

ISOLATED

Not Qualified

260

370 ns

BSM300GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

570 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKA08N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

10.8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

15 ns

DF300R07PE4_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

690 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

BSM35GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRG8P25N120KD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

585 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

40 ns

FZ2400R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3700 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1390 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

580 ns

2PS18012E44G38553

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FS225R12KE4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1100 W

320 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

220 ns

IGC142T120T8RLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

7

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N7

NOT SPECIFIED

NOT SPECIFIED

FF800R17KF6CB2NOSA1

Infineon Technologies

N-Channel

6250 W

1300 A

3.1 V

1240 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

540 ns

IHW50N65R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

282 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

261 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

51 ns

DF650R17IE4BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

BSM25GB120D

Infineon Technologies

300 W

25 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

FZ2400R17HP4B29BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

665 ns

DF160R12W2H3B11BOMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

AIHD06N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

149 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

17 ns

AEC-Q101

IHW30N100TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

702 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

90 ns

BUP313

Infineon Technologies

N-CHANNEL

SINGLE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

470 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-218AB

e3

115 ns

IRGS4055PBF

Infineon Technologies

N-CHANNEL

YES

255 W

110 A

55 ns

198 ns

Insulated Gate BIP Transistors

150 Cel

30 V

5 V

MATTE TIN OVER NICKEL

1

30

260

BUP300

Infineon Technologies

N-CHANNEL

NO

50 W

3.5 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

F3L400R10W3S7F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

220 A

UNSPECIFIED

1.6 V

UNSPECIFIED

RECTANGULAR

6

773 ns

20

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X20

ISOLATED

127 ns

IEC-61140

FZ1600R17HP4B21BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X7

1

ISOLATED

690 ns

UL APPROVED

FD600R17KE3KB5NOSA1

Infineon Technologies

4300 W

950 A

2.45 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

NOT SPECIFIED

NOT SPECIFIED

IHW30N90TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

691 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED

TO-247AD

82 ns

BSM50GD12DLCE3226

Infineon Technologies

350 W

50 A

2.6 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

IGC99T120T6RH

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGMC40UD

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

Q67050-A4181-A002

Infineon Technologies

N-Channel

2.5 V

644 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

133 ns

IRG5U50HF12A

Infineon Technologies

N-Channel

50 A

3.5 V

485 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

70000 ns

FZ800R17KF6CB2NOSA1

Infineon Technologies

N-Channel

6600 W

1300 A

3.1 V

1220 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

440 ns

FF225R17ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

340 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1500 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

IRG6S330UTRRPBF

Infineon Technologies

N-CHANNEL

YES

160 W

70 A

Insulated Gate BIP Transistors

150 Cel

330 V

30 V

5 V

IGD15N65T6

Infineon Technologies

N-Channel

100 W

30 A

1.9 V

202 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

1

50 ns

HYBRIDKIT2TOBO1

Infineon Technologies

FS35R12YT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

225 W

40 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGS10B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

22 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

GULL WING

RECTANGULAR

1

34 ns

276 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

50 ns

FZ1800R12KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ400R33KL2C_B5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4900 W

750 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

1

4250 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1400 ns

IRGCC30FEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRGC14C40LD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

2.4 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

IGP20N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

31 ns

IKB20N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

41 ns

DF100R07W1H5FPB53BPSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

40 ns

26

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

17 ns

FZ3600R17HP4B2BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

945 ns

FS30R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

34 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

245 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

FZ1800R17HP4B29BOSA2

Infineon Technologies

N-Channel

11500 W

2.25 V

1860 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

1

ISOLATED

880 ns

IGP30N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

224 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.