Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGC70T120T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

FD1200R17HP4-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

FZ2400R12HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

BSM300GB120DLC_E3256

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

190 ns

G300HHCK12P2P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

450 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

2200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

TIN LEAD

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

e0

1130 ns

IRGS4620DTRLPBF

Infineon Technologies

N-CHANNEL

YES

140 W

32 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

1

e3

FS650R08A4P2

Infineon Technologies

N-Channel

6.5 V

1000 ns

1503 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

410 ns

BSM50GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

IKP30N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

FZ3600R12HP4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19000 W

4930 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

890 ns

IKY75N120CS6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

331 ns

4

IN-LINE

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSIP-T4

e3

64 ns

IRGC4630B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.325 V

NO LEAD

SQUARE

1

160 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N2

65 ns

FZ400R12KE3B1HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

DF160R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

UL APPROVED

DF300R07PE4B6BOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IRGIB10B60KD1P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

44 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

34 ns

THROUGH-HOLE

RECTANGULAR

1

87 ns

288 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

46 ns

IRG5K150HF12B

Infineon Technologies

N-Channel

150 A

2.6 V

760 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

120000 ns

BSM50GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 W

78 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

450 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IHW40N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

429 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

506 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

DF150R12RT4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

790 W

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

1

490 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

185 ns

FS150R06KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

430 W

150 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

IRGMIC50UU

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

e0

AIKQ100N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

AEC-Q101

IFS100B12N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

515 W

150 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X34

ISOLATED

210 ns

FP75R12KT4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

IRGAC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

DF200R12PT4_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

IRGC14C40LCPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

370 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FD200R12PT4B6BOSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IGB15N60TXT

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

32 ns

IGC36T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Q67050-A4155-A001

Infineon Technologies

N-Channel

2.4 V

270 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

49 ns

BSM50GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

70 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

151 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

F3L200R07PE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

Q67050-A4134-A001

Infineon Technologies

N-Channel

2.5 V

135 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

29 ns

IFF450B12ME4P_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

690 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

FZ2400R12HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

UL APPROVED

IKB40N65ES5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

79 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

204 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

36 ns

AIKW50N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

60 ns

AEC-Q101

FS900R08A2P2B31BOSA1

Infineon Technologies

N-Channel

1546 W

6.5 V

820 ns

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

FB10R06VE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE

NO

48.5 W

16 A

UNSPECIFIED

2 V

WIRE

RECTANGULAR

6

280 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-W15

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

40 ns

BUP309

Infineon Technologies

N-CHANNEL

NO

310 W

80 ns

Insulated Gate BIP Transistors

150 Cel

1700 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IRGC48B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FF800R12KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1140 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

880 ns

IRGCC40UE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

AIKW50N65DF5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IGC15T65QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.32 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IHW30N65R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

44 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.