Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6500 W |
PLASTIC/EPOXY |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1800 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X7 |
1 |
ISOLATED |
900 ns |
UL APPROVED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1320 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
880 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
625 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
650 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
190 ns |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
NO |
450 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
2200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
TIN LEAD |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
e0 |
1130 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
140 W |
32 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
6.5 V |
1000 ns |
1503 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
410 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
75 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
151 ns |
7 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
188 W |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
206 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
28 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
19000 W |
4930 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1550 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
Not Qualified |
890 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
880 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
331 ns |
4 |
IN-LINE |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
SINGLE |
R-PSIP-T4 |
e3 |
64 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.325 V |
NO LEAD |
SQUARE |
1 |
160 ns |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N2 |
65 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
650 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
830 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
50 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
375 ns |
19 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
44 W |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
34 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
87 ns |
288 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
46 ns |
|||||||||||||||||||
Infineon Technologies |
N-Channel |
150 A |
2.6 V |
760 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
120000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
400 W |
78 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
450 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
429 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.75 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
506 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
790 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
1 |
490 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
1 |
ISOLATED |
Not Qualified |
260 |
185 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
430 W |
150 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
45 A |
METAL |
PIN/PEG |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-259AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
714 W |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
393 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
83 ns |
AEC-Q101 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
210 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
23 A |
METAL |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
FAST |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1100 W |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
3 |
407 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
225 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.4 V |
270 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
49 ns |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
151 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
600 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
2.5 V |
135 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
29 ns |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR |
NO |
450 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
690 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
3560 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1320 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
880 ns |
UL APPROVED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
230 W |
79 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
GULL WING |
RECTANGULAR |
1 |
204 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
36 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
396 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
60 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
1546 W |
6.5 V |
820 ns |
150 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
500 ns |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE |
NO |
48.5 W |
16 A |
UNSPECIFIED |
2 V |
WIRE |
RECTANGULAR |
6 |
280 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-W15 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
310 W |
80 ns |
Insulated Gate BIP Transistors |
150 Cel |
1700 V |
20 V |
6.5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1140 ns |
10 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X10 |
1 |
ISOLATED |
Not Qualified |
880 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
ULTRA FAST SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.32 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.6 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
258 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
44 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.