Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP75R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FS800R06A2E3

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1500 W

700 A

UNSPECIFIED

1.6 V

UNSPECIFIED

RECTANGULAR

6

1000 ns

33

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X33

ISOLATED

Not Qualified

230 ns

FB15R06KL4B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

60 W

19 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

249 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X26

ISOLATED

Not Qualified

e3

71 ns

Q67050-A4220-A101

Infineon Technologies

N-Channel

3.15 V

122 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

11 ns

IHW30N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

50 ns

IGC193T120T8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

Q67041-A4688-A001

Infineon Technologies

N-Channel

2.5 V

135 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

29 ns

BSM300GA170DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

IGB15N60T

Infineon Technologies

N-CHANNEL

SINGLE

YES

130 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

32 ns

IGC39T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

FB10R06KL4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

55 W

16 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

260 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

IRG6S320UTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

270 ns

2

SMALL OUTLINE

SILICON

330 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

75 ns

F4-200R17N3E4

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1160 ns

30

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FZ3600R17HP4NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1075 ns

IGZ50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

311 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

27 ns

FZ825R33HE4D

Infineon Technologies

N-CHANNEL

COMPLEX

NO

825 A

PLASTIC/EPOXY

POWER CONTROL

2.65 V

UNSPECIFIED

RECTANGULAR

2

4100 ns

7

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

690 ns

IEC-60747; IEC-60749; IEC-60068

IKB40N65EF5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

74 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

260

57 ns

IGB03N120H2-E3045A

Infineon Technologies

N-CHANNEL

YES

62.5 W

3 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

3.9 V

IRGS4055TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

671 ns

2

SMALL OUTLINE

SILICON

300 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

82 ns

FP75R17N3E4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FZ800R33KL2C_B5

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9800 W

1500 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1400 ns

FP75R06KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

95 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

760 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

OM6506SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

1000 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

100 ns

IFF600B12ME4P_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

750 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

IKP04N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

207 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-220AB

e3

21 ns

IRGS30B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

237 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

74 ns

DF80R07W1H5FP_B11

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

20 A

UNSPECIFIED

1.72 V

UNSPECIFIED

RECTANGULAR

2

124 ns

18

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

17 ns

IRG5U100HH06E

Infineon Technologies

N-Channel

100 A

920 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

100000 ns

RG7T225HF12J

Infineon Technologies

G150SPBK06P3H

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-X24

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

IGC10R60DX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

GA100TS60SQ

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

UL APPROVED

IKW08N120CS7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

21 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

255 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

SINGLE

R-PSFM-T3

TO-247

29 ns

IKWH70N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

122 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

404 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

73 ns

FZ1800R17HP4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

260

900 ns

F3L50R06W1E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

175 W

75 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

295 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

GA200NS61U

Infineon Technologies

625 W

200 A

2.2 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

Q67050-A4222-A101

Infineon Technologies

N-Channel

3.15 V

100 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

23.5 ns

IRGCH20SE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

5.5 V

UPPER

R-XUUC-N2

Not Qualified

STANDARD SPEED

40

260

IKA03N120H2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

29 W

3 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

14.2 ns

DF75R12W1H4F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.65 V

UNSPECIFIED

RECTANGULAR

3

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

FS300R12KF4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

300 A

UNSPECIFIED

2.7 V

UNSPECIFIED

RECTANGULAR

6

1150 ns

27

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X27

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 ns

FZ1600R12HP4

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9400 W

2400 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1330 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

820 ns

IKP15N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

195 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

26 ns

IKY75N120CH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

468 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

73 ns

IRGC4069B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

R-XUUC-N2

FF75R12YT3ENG

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

710 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

108 ns

IGC39T65T8M

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.82 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.