Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXYX300N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	2300 W	600 A	PLASTIC/EPOXY	POWER CONTROL	1.6 V	THROUGH-HOLE	RECTANGULAR	1		435 ns	3	IN-LINE			175 Cel	SILICON	650 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR							155 ns
IXGH39N60CD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT				SILICON					MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3	10	260
IXGT25N250	Littelfuse	N-CHANNEL	SINGLE	YES		60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		409 ns	2	SMALL OUTLINE			150 Cel	SILICON	2500 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	301 ns
IXGH45N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	700 ns	1400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	96 ns
IXGH25N100AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	800 ns	720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	100 ns
IXGH24N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	51 ns
IXYH40N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
IXYH50N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns
IXGH10N300	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	18 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		684 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	299 ns
IXYH40N65B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		213 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				57 ns
MMIX4B22N300-2	Littelfuse
IXYX110N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	310 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR							88 ns
IXYH55N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	650 W	140 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		222 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				70 ns
IXYH90N65A5	Littelfuse
IXGH17N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1		1900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			300 ns
IXGH25N100	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1		1670 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			350 ns
IXGH28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		915 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			66 ns
IXGH16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			43 ns
IXGH17N100A	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		1450 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3			300 ns
IXGH12N100	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		2150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	300 ns
IXGH12N100A	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		1850 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	300 ns
IXGT24N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	80 ns	456 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	54 ns
IXGH24N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	80 ns	456 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			54 ns
IXYX110N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	375 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		850 ns	3	IN-LINE			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-247AD				78 ns
IXYX140N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	480 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		1240 ns	3	IN-LINE			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					86 ns
IXGT32N60C	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	160 ns	110 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA	e3			25 ns
IXGT20N140C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	42 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		524 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-268AA	e3	10	260	35 ns
IXGH32N60C	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		110 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	25 ns
IXGH20N140C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	42 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		524 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRA FAST	TO-247	e3			35 ns
T1600GB45G	Littelfuse	N-CHANNEL			12800 W	1600 A											Insulated Gate BIP Transistors		125 Cel		4500 V		20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.