Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH120N30B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		164 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	10	260	49 ns
IXGH25N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	3000 ns	720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	100 ns
MIXA40W200TED	Littelfuse				195 W	55 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
IXGT24N170A	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	80 ns	275 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	98 ns
IXGH64N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		777 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	65 ns
IXGT40N120A2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		2300 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
IXGH24N170A	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	80 ns	275 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	98 ns
MIXA150Q1200VA	Littelfuse																																			NOT SPECIFIED	NOT SPECIFIED
IXGH40N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	380 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		4.4 V	THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	52 ns
IXGH15N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	30 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	255 ns	302 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	495 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	40 ns
MIXA80W1200TEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
MIXA225RF1200TSF	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
IXXH40N65B4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		252 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				67 ns
IXGH72N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	240 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	490 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	64 ns
IXYH20N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	278 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXGH48N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	48 ns
IXBT16N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	GULL WING	RECTANGULAR	1		940 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	220 ns
IXYH55N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	650 W	175 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		910 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				54 ns
MIXA101W1200EH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	155 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X19		ISOLATED							110 ns	UL RECOGNIZED
MIXA20WB1200TMI	Littelfuse
IXGH20N90	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGT24N170	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	500 ns	560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
IXGH9090	Littelfuse	N-CHANNEL		NO	150 W	48 A								400 ns				Insulated Gate BIP Transistors		150 Cel		600 V		20 V		5.5 V	Tin/Lead (Sn/Pb)								e0
MIXA60WB1200TEH	Littelfuse	N-CHANNEL	COMPLEX	NO	290 W	85 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXYH16N170C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				35 ns
MIXA225W1200TFH	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
IXYH40N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		206 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	65 ns
IXGH25N80A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N50	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH30N50	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	320 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1		826 ns	3	IN-LINE			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							84 ns
MMIX1Y82N120C3H1	Littelfuse	N-CHANNEL		YES	320 W	78 A												Insulated Gate BIP Transistors		150 Cel		1200 V		20 V		5 V
IXGH72N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	132 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	64 ns
IXYH30N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				57 ns
IXBF40N140	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	28 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		340 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY, FAST SWITCHING		e1			260 ns
IXGH28N30A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXYX140N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	310 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		300 ns	3	IN-LINE			175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3		COLLECTOR							122 ns
IXGH25N120	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1920 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V		20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	350 ns
IXGT4N250C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		471 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
MMIX1X340N65B4	Littelfuse	N-CHANNEL	SINGLE	YES	1200 W	450 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	GULL WING	RECTANGULAR	1		346 ns	21	SMALL OUTLINE			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		DUAL	R-PDSO-G21		ISOLATED		LOW CONDUCTION LOSS					119 ns
IXGT28N30B	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		90 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXYH30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		120 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	59 ns
MIXA50WB600TED	Littelfuse
IXYH12N250C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	THROUGH-HOLE	RECTANGULAR	1		303 ns	3	FLANGE MOUNT			175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				28 ns
IXGH35N120B	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				77 ns
IXGT15N100C	Littelfuse	N-CHANNEL	SINGLE	YES		30 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		430 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA				43 ns
IXGT64N60A3	Littelfuse	N-CHANNEL	SINGLE	YES		64 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		777 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	65 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.