Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
T0710TC33A	Littelfuse
MIXA150R1200VA	Littelfuse																																			NOT SPECIFIED	NOT SPECIFIED
IXGH64N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	226 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	66 ns
IXGH25N80	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	470 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		459 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				87 ns
IXYH40N65C3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				63 ns
MIXA30WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXGH120N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		195 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	65 ns
IXGT28N120B	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	320 ns	590 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	63 ns
MIXA20WB1200TML	Littelfuse	N-CHANNEL	COMPLEX	NO	100 W	28 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X25		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXBT16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	40 ns
IXGH12N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	22 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1545 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	202 ns
IXGT28N60D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		40 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1			2	SMALL OUTLINE				SILICON						PURE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-268AA
IXGH20N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	450 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH40N120A2	Littelfuse	N-CHANNEL	SINGLE	NO	360 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	1200 ns	1220 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	2000 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	63 ns
IXGH40N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		1180 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	48 ns
MIXA300PF1200TSF	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	465 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	2		635 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X11		ISOLATED							178 ns	IEC-60747; UL RECOGNIZED
IXYH100N65B3	Littelfuse
MMIX1X200N60B3H1	Littelfuse
IXXH30N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		292 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	57 ns
IXGT15N120C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	190 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e0			43 ns
MIXA80R1200VA	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	1		350 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X8		ISOLATED							110 ns	UL RECOGNIZED
IXXH30N65C4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	62 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		161 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				65 ns
IXBT22N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		2025 ns	2	SMALL OUTLINE			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				406 ns
IXGT32N120A3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	GULL WING	RECTANGULAR	1		1380 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	239 ns
IXBF15N300C	Littelfuse
IXGT72N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1	160 ns	240 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	20 V	490 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	64 ns
IXGT40N60C	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		155 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	60 ns
MMIX1B20N300C	Littelfuse
IXBT16N360HV	Littelfuse
IXGH48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXGH50N50B	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	50 ns
IXGH40N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		4.4 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	475 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	52 ns
IXGH56N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	56 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	165 ns	250 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	500 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	67 ns
IXGH50N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	48 ns
IXGH30N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	53 ns
IXGH12N90C	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	24 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	180 ns	350 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	900 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	40 ns
MIXA100PM650TMI	Littelfuse				330 W	150 A				1.8 V			1					Insulated Gate BIP Transistors		125 Cel		650 V		20 V
IXYH40N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		237 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	81 ns
IXGT24N60B	Littelfuse	N-CHANNEL	SINGLE	YES		48 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE				SILICON	600 V					PURE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-268AA
IXGT15N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	192 W	30 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	GULL WING	RECTANGULAR	1	255 ns	302 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	495 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	40 ns
IXXH140N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1200 W	340 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				128 ns
IXGH17N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		1900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	300 ns
IXBF9N140	Littelfuse	N-CHANNEL	SINGLE	NO	70 W	7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			260 ns
IXBT10N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		3.8 V	GULL WING	RECTANGULAR	1		1800 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	63 ns
IXGT40N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1		770 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	79 ns
IXYH40N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	680 W	136 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		490 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				63 ns
IXGH40N50A	Littelfuse	N-CHANNEL		NO	250 W	75 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.