Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MITH200PF1200YI

Littelfuse

IXGP30N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

331 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

53 ns

IXGP20N100A3

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

1630 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

162 ns

IXGD12N100A-33

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXXK300N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

550 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

137 ns

MG12200D-BA1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

565 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

195 ns

UL RECOGNIZED

MWI35-12AS

Littelfuse

N-CHANNEL

NO

37 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

17

FLANGE MOUNT

SILICON

1200 V

PURE TIN

UPPER

R-PUFM-P17

Not Qualified

IXGX82N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

230 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

180 ns

760 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

112 ns

MII75-12A3

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

415 W

90 A

UNSPECIFIED

MOTOR CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

570 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

UL RECOGNIZED

IXA30RG1200DHGLB-TRR

Littelfuse

VID25-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

130 W

30 A

UNSPECIFIED

MOTOR CONTROL

3.3 V

UNSPECIFIED

RECTANGULAR

1

570 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

175 ns

IXGP10N50

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP20N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

180 W

36 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

61 ns

IXGD24N60A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGP10N100A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXYA8N90C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

39 ns

IXYK300N65A3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

600 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

155 ns

MWI45-12T6K

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

43 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

UL RECOGNIZED

IXGE50N60Z

Littelfuse

200 W

50 A

3 V

1

Insulated Gate BIP Transistors

600 V

IXGX35N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

86 ns

IXBN75N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

595 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

65 ns

UL RECOGNIZED

MIXG240RF1200PTED

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

335 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

1

640 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

7.5 V

UPPER

R-XUFM-X20

ISOLATED

295 ns

IEC-60747; UL RECOGNIZED

VUB60-12NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

IXYN120N65B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

250 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

1

422 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

UPPER

R-PUFM-X4

ISOLATED

60 ns

UL RECOGNIZED

MWI80-12T6K

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

80 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

UL RECOGNIZED

IXYP20N65B3

Littelfuse

N-CHANNEL

SINGLE

NO

230 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

T0500NB25E

Littelfuse

N-CHANNEL

2600 W

500 A

Insulated Gate BIP Transistors

125 Cel

2500 V

20 V

6.3 V

VID75-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

379 W

92 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

570 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

IXGK50N90B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

820 ns

3

FLANGE MOUNT

150 Cel

SILICON

900 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

48 ns

MITA150H1700TEH

Littelfuse

IXDP20N60B

Littelfuse

N-CHANNEL

SINGLE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

IXA40I4000KN

Littelfuse

IXBL20N300C

Littelfuse

IXGN72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

360 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

1

885 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

61 ns

UL RECOGNIZED

VKI75-06P1

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

69 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

4

330 ns

16

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

IXGX55N120A3D1

Littelfuse

N-CHANNEL

NO

460 W

125 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

IXA45IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

78 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXGJ50N60B

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

450 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e3

100 ns

IXYP15N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

122 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

36 ns

MBPW16-06S6

Littelfuse

N-CHANNEL

COMPLEX

NO

32 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

7

290 ns

25

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-P25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

IXYK100N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

188 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

122 ns

LGD8205ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

IXGD50N60A-77

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD30N60B-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXYP10N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

128 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

44 ns

IXGM10N50A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXA20PG1200DHGLB

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

130 W

32 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

2

350 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

Nickel (39) Tin (984)

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

110 ns

UL RECOGNIZED

IXA20RG1200DHGLB

Littelfuse

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.