Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Littelfuse |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
331 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
53 ns |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1630 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
162 ns |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
1000 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
550 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
137 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
565 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
195 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
NO |
37 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
17 |
FLANGE MOUNT |
SILICON |
1200 V |
PURE TIN |
UPPER |
R-PUFM-P17 |
Not Qualified |
|||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
230 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
760 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
112 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
415 W |
90 A |
UNSPECIFIED |
MOTOR CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
570 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
130 W |
30 A |
UNSPECIFIED |
MOTOR CONTROL |
3.3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
175 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
180 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
61 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
238 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AA |
e3 |
10 |
260 |
39 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
600 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
435 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
155 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
43 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
Littelfuse |
200 W |
50 A |
3 V |
1 |
Insulated Gate BIP Transistors |
600 V |
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Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
480 ns |
3 |
IN-LINE |
SILICON |
1200 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
86 ns |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
595 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
NICKEL |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
65 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1250 W |
335 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
640 ns |
20 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
295 ns |
IEC-60747; UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
220 ns |
8 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
GOLD OVER NICKEL |
UPPER |
R-PUFM-X8 |
ISOLATED |
Not Qualified |
e4 |
100 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
830 W |
250 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
1 |
422 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
60 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
80 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
230 W |
58 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
271 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
2600 W |
500 A |
Insulated Gate BIP Transistors |
125 Cel |
2500 V |
20 V |
6.3 V |
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|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
379 W |
92 A |
UNSPECIFIED |
MOTOR CONTROL |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
820 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
48 ns |
|||||||||||||||||||
|
Littelfuse |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
32 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||||
Littelfuse |
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|
Littelfuse |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
360 W |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
UNSPECIFIED |
RECTANGULAR |
1 |
885 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
NICKEL |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
61 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
69 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
330 ns |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
NO |
460 W |
125 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
5 V |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
325 W |
78 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
450 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e3 |
100 ns |
|||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
38 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
122 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
36 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
32 A |
UNSPECIFIED |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
290 ns |
25 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-P25 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1150 W |
188 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
265 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
122 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
14000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
10000 ns |
-55 Cel |
15 V |
18000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
7500 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
S-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
128 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
44 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
130 W |
32 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
2 |
350 ns |
9 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
Nickel (39) Tin (984) |
DUAL |
R-PDSO-G9 |
ISOLATED |
HIGH RELIABILITY |
110 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.