Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGK120N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	780 W	280 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		520 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	123 ns
IXGA28N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	GULL WING	RECTANGULAR	1		870 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	46 ns
IXBH28N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		2260 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AD	e3	10	260	71 ns
IXGN120N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	200 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	UNSPECIFIED	RECTANGULAR	1		830 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					123 ns	UL RECOGNIZED
IXGD60N60-7X	Littelfuse	N-CHANNEL	SINGLE	YES			UNSPECIFIED				NO LEAD	RECTANGULAR	1			3	UNCASED CHIP			SILICON	600 V							UPPER	R-XUUC-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
IXGE50N100Z	Littelfuse				200 W	50 A				3.5 V			1					Insulated Gate BIP Transistors			1000 V
MWI300-17E9	Littelfuse	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2200 W	500 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		610 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1700 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X17		ISOLATED	Not Qualified			e3			290 ns
FII30-06D	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	100 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	2		330 ns	5	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1	NOT SPECIFIED	NOT SPECIFIED	105 ns
IXGK320N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	320 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1		1870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	139 ns
IXYN120N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	190 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		173 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED							57 ns	UL RECOGNIZED
IXGM25N90A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		900 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
MG17100S-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	UNSPECIFIED	POWER CONTROL		2.45 V	UNSPECIFIED	RECTANGULAR	2		1100 ns	7	FLANGE MOUNT		125 Cel	SILICON	1700 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	450 ns	UL RECOGNIZED
IXGA48N60C3-TRL	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	45 ns
IXBH20N140	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	260 ns
IXYP15N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				36 ns
IXGP50N33TBM-A	Littelfuse	N-CHANNEL	SINGLE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		344 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			45 ns
IXGA4N100	Littelfuse	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		1220 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V		-55 Cel				Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	45 ns
T1800GB45A	Littelfuse	N-CHANNEL			13700 W	1800 A												Insulated Gate BIP Transistors	125 Cel		4500 V			20 V
IXBP5N160G	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	5.7 A	PLASTIC/EPOXY	POWER CONTROL		7.2 V	THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT		150 Cel	SILICON	1600 V		-55 Cel	20 V		5.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				340 ns
IXBN75N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	145 A	PLASTIC/EPOXY	POWER CONTROL		3.1 V	UNSPECIFIED	RECTANGULAR	1		840 ns	4	FLANGE MOUNT		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED							277 ns	UL RECOGNIZED
IXGX55N120A3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	125 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1253 ns	3	IN-LINE		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					70 ns
MDI550-12A4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2750 W	670 A	UNSPECIFIED	POWER CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		690 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	160 ns	UL RECOGNIZED
IXYP10N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	160 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				46 ns
IXGV32N170	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		920 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V							SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	90 ns
MG17200D-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED	POWER CONTROL		2.45 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT		125 Cel	SILICON	1700 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	480 ns	UL RECOGNIZED
MWI60-06G6K	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		60 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		210 ns	24	FLANGE MOUNT		125 Cel	SILICON	600 V							UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	40 ns	UL RECOGNIZED
IXBJ40N160	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	33 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1600 V			20 V		8 V	MATTE TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e3			260 ns
MG1275W-XN2MM	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		105 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	6		610 ns	35	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-PUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	340 ns
IXFN100N120	Littelfuse
VII50-12P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	49 A	UNSPECIFIED	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	2		570 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			GOLD OVER NICKEL	UPPER	R-XUFM-X12		ISOLATED	Not Qualified			e4			170 ns
IXCK36N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	73 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1380 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V			25 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				935 ns
IXBH9N160	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	9 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1600 V		-55 Cel	20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	260 ns
IXXK160N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	940 W	310 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	93 ns
MIXG180W1200TEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	935 W	280 A	UNSPECIFIED	POWER CONTROL		2 V	UNSPECIFIED	RECTANGULAR	6		440 ns	35	FLANGE MOUNT		175 Cel	SILICON	1200 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X35		ISOLATED							175 ns	UL RECOGNIZED
IXGD32N60A-57	Littelfuse	N-CHANNEL	SINGLE	YES			UNSPECIFIED				NO LEAD	SQUARE	1			2	UNCASED CHIP			SILICON	600 V							UPPER	S-XUUC-N2			Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
IXGA9289	Littelfuse	N-CHANNEL	SINGLE	YES		120 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		124 ns	2	SMALL OUTLINE		150 Cel	SILICON	300 V		-55 Cel				Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	104 ns
IXYF30N450	Littelfuse	N-CHANNEL	SINGLE	NO	230 W	23 A	PLASTIC/EPOXY	POWER CONTROL		3.9 V	THROUGH-HOLE	RECTANGULAR	1		1545 ns	3	IN-LINE		150 Cel	SILICON	4500 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		ISOLATED							632 ns
T1500TB25E	Littelfuse
IXGA7N60B	Littelfuse	N-CHANNEL	SINGLE	YES	54 W	14 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		450 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-263AB	e3	10	260	25 ns
IXYP24N100A4	Littelfuse	N-CHANNEL	SINGLE	NO	375 W	85 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		525 ns	3	FLANGE MOUNT		175 Cel	SILICON	1000 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				53 ns
LGB8207ATH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	165 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2000 ns		GULL WING	RECTANGULAR	1	15000 ns	14700 ns	2	SMALL OUTLINE		175 Cel	SILICON	365 V	2750 ns	-55 Cel	15 V	21000 ns	2 V		SINGLE	R-PSSO-G2		COLLECTOR							2450 ns	AEC-Q101
IXGX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		420 ns	3	IN-LINE		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					124 ns
IXYA20N65B3	Littelfuse	N-CHANNEL	SINGLE	YES	230 W	58 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		271 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	39 ns
IXYP15N65C3D1M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	57 W	18 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				36 ns
FII30-09G	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		42 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	2		690 ns	5	IN-LINE		150 Cel	SILICON	900 V						TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			42 ns	UL RECOGNIZED
T0800TB45E	Littelfuse	N-CHANNEL			6400 W	800 A												Insulated Gate BIP Transistors	125 Cel		4500 V			20 V
ITF48IF1200HR	Littelfuse	N-CHANNEL	SINGLE	NO	390 W	72 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		460 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3		ISOLATED							52 ns	UL RECOGNIZED
T0850VB25E	Littelfuse	N-CHANNEL			4400 W	850 A												Insulated Gate BIP Transistors	125 Cel		2500 V			20 V		6.3 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.