Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBH16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	210 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V		-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	40 ns
IXGE75N60Z	Littelfuse				250 W	75 A				3.2 V			1					Insulated Gate BIP Transistors			600 V
MDI150-12A4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	180 A	UNSPECIFIED	POWER CONTROL		3 V	UNSPECIFIED	RECTANGULAR	1		570 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns	UL RECOGNIZED
IXA55I1200HJ	Littelfuse	N-CHANNEL	SINGLE	NO	290 W	84 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		SINGLE	R-PSIP-T3		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
LGB8207TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	165 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2000 ns		GULL WING	RECTANGULAR	1	15000 ns	14700 ns	2	SMALL OUTLINE		175 Cel	SILICON	365 V	2750 ns	-55 Cel	15 V	21000 ns	2 V		SINGLE	R-PSSO-G2		COLLECTOR							2450 ns	AEC-Q101
IXYA20N65C3	Littelfuse	N-CHANNEL	SINGLE	YES	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		132 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	51 ns
IXGA20N100	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1	700 ns	630 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V		-55 Cel	20 V	1400 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	60 ns
MKI100-12F8	Littelfuse	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	NO		125 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	4		395 ns	21	FLANGE MOUNT		125 Cel	SILICON	1200 V							UPPER	R-XUFM-X21		ISOLATED	Not Qualified	LOW SATURATION VOLTAGE, FAST SWITCHING			NOT SPECIFIED	NOT SPECIFIED	190 ns
T0640VC33E	Littelfuse
MWI30-06A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	140 W	45 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	6		310 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			100 ns	UL RECOGNIZED
MG12200D-BN2MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		290 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		680 ns	7	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	215 ns	UL RECOGNIZED
IXGM40N50A	Littelfuse	N-CHANNEL		NO	250 W				200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V						Tin/Lead (Sn/Pb)								e0
VID125-12P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO		138 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		700 ns	13	FLANGE MOUNT		150 Cel	SILICON	1200 V							UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
VID50-12P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	49 A	UNSPECIFIED	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	1		570 ns	10	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X10		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
T1500EC33E	Littelfuse	N-CHANNEL	SINGLE	YES	2590 W	1500 A	CERAMIC, METAL-SEALED COFIRED			2.65 V	UNSPECIFIED	ROUND	1		2550 ns	3	DISK BUTTON		125 Cel	SILICON	3300 V		-40 Cel	20 V				END	O-CEDB-X3									1100 ns
IXYA8N250CHV	Littelfuse	N-CHANNEL	SINGLE	YES	280 W	29 A	PLASTIC/EPOXY	POWER CONTROL		4 V	GULL WING	RECTANGULAR	1		328 ns	2	SMALL OUTLINE		175 Cel	SILICON	2500 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	24 ns
IXEX50N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		70 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		750 ns	3	IN-LINE		150 Cel	SILICON	1200 V						TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			110 ns
VII100-06P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	294 W	93 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2		490 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			GOLD OVER NICKEL	UPPER	R-XUFM-X12		ISOLATED	Not Qualified			e4			210 ns
LGD15N41ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	17000 ns	-55 Cel	15 V	25000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252				9500 ns	AEC-Q101
VIO500-12S	Littelfuse				2500 W	600 A				3.9 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V			30 V
MWI60-2T6K	Littelfuse				200 W	58 A				2.3 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V			20 V
IXRH50N60	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXYF16N250CV1	Littelfuse
IXRP15N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	25 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		253 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			33.5 ns
IXA30RG1200DHGLB	Littelfuse
IXGL200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.5 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	493 ns	5	IN-LINE		150 Cel	SILICON	600 V		-55 Cel	20 V	750 ns	5 V		SINGLE	R-PSIP-T5		ISOLATED							127 ns
IXGE50N80Z	Littelfuse				200 W	50 A				3.5 V			1					Insulated Gate BIP Transistors			800 V
IXLF19N220A	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		650 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2200 V			20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			300 ns
IXBH6N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	12 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	THROUGH-HOLE	RECTANGULAR	1		700 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	104 ns
IXGP15N100C	Littelfuse	N-CHANNEL	SINGLE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	43 ns
T1200EA45E	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		2132 A	CERAMIC, METAL-SEALED COFIRED				NO LEAD	ROUND	1		3100 ns	3	DISK BUTTON		125 Cel	SILICON	4500 V							END	O-CEDB-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	4500 ns
IXGK82N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1250 W	230 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1	180 ns	760 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	112 ns
IXYN30N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	680 W	80 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1		327 ns	4	FLANGE MOUNT		175 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		UPPER	R-PUFM-X4		ISOLATED							49 ns	UL RECOGNIZED
IXBH28N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		150 Cel	SILICON	1700 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260
MITH175PF1200YI	Littelfuse
IXGA8N100	Littelfuse	N-CHANNEL	SINGLE	YES	54 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	900 ns	990 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V		-55 Cel	20 V	1900 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	45 ns
MG06400D-BN1MM	Littelfuse																																			NOT SPECIFIED	NOT SPECIFIED
IXGP12N120A2	Littelfuse	N-CHANNEL	SINGLE	NO		24 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1750 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	45 ns
MWI35-12T7T	Littelfuse	N-CHANNEL	COMPLEX	NO	200 W	60 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		700 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X28		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns	UL RECOGNIZED
IXGD45N120-7U	Littelfuse	N-CHANNEL	SINGLE	YES			UNSPECIFIED				NO LEAD	RECTANGULAR	1			7	UNCASED CHIP			SILICON	1200 V							UPPER	R-XUUC-N7			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MIXD200W650TEH	Littelfuse
IXGN400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	735 W	400 A	PLASTIC/EPOXY	POWER CONTROL		1.15 V	UNSPECIFIED	RECTANGULAR	1		555 ns	4	FLANGE MOUNT		150 Cel	SILICON	300 V		-55 Cel	20 V		5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					100 ns	UL RECOGNIZED
IXA40PG1200DHGLB-TRR	Littelfuse				230 W	63 A				2.15 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V			20 V
IXBH42N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	104 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		950 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V		-55 Cel	25 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				652 ns
T0570VB25G	Littelfuse	N-CHANNEL			2960 W	570 A												Insulated Gate BIP Transistors	125 Cel		2500 V			20 V		6.3 V
IXYK200N65B3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN RESISTOR	NO	1560 W	410 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		700 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				170 ns
MIXD50W650TED	Littelfuse
MITH125PF1700YI	Littelfuse

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.