Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MWI75-12A5	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	90 A	UNSPECIFIED	MOTOR CONTROL		3 V	PIN/PEG	RECTANGULAR	6		570 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN	UPPER	R-XUFM-P17		ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGQ150N60Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors	150 Cel		600 V		20 V
IXGQ25N50Y4	Littelfuse				150 W	25 A				3.5 V			1					Insulated Gate BIP Transistors	150 Cel		500 V		20 V
VUB116-16NO1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO	380 W	95 A	UNSPECIFIED	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	1			11	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			GOLD OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e4				UL RECOGNIZED
IXGQ100N50Y4	Littelfuse				400 W	100 A				3.5 V			1					Insulated Gate BIP Transistors	150 Cel		500 V		20 V
MUBW30-12A6	Littelfuse	N-CHANNEL	COMPLEX	NO	104 W	31 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	7		730 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			150 ns
MUBW40-2T7	Littelfuse
VUB120-12NO2L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		140 A	UNSPECIFIED	POWER CONTROL			PIN/PEG	RECTANGULAR	1			16	FLANGE MOUNT		150 Cel	SILICON	1200 V					GOLD OVER NICKEL	UPPER	R-XUFM-P16		ISOLATED	Not Qualified			e4				UL REGISTERED
IXGR40N60B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	10	260	55 ns
MUBW35-06A6K	Littelfuse	N-CHANNEL	COMPLEX	NO	130 W	42 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	7		310 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN	UPPER	R-XUFM-X21		ISOLATED	Not Qualified			e3			100 ns	UL RECOGNIZED
MWI15-12A6K	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		19 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT		150 Cel	SILICON	1200 V					MATTE TIN	UPPER	R-XUFM-X13		ISOLATED	Not Qualified			e3			90 ns	UL RECOGNIZED
MUBW25-12A7	Littelfuse	N-CHANNEL	COMPLEX	NO		20 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT		125 Cel	SILICON	1200 V					MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			90 ns
MWI50-12A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	85 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		570 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGR72N60A3U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	52 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		510 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	29 ns	UL RECOGNIZED
MUBW10-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO	45 W	11 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	7		325 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			80 ns
MWI150-06A8	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	515 W	170 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	6		260 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X33		ISOLATED	Not Qualified	ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			155 ns
VUB160-12NO2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		177 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			10	FLANGE MOUNT		150 Cel	SILICON	1200 V					Gold (Au) - with Nickel (Ni) barrier	UPPER	R-XUFM-X10		ISOLATED	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED		UL RECOGNIZED
IXGQ25N100Y4	Littelfuse				125 W	25 A				4 V			1					Insulated Gate BIP Transistors	150 Cel		1000 V		20 V
MUBW45-12T6K	Littelfuse	N-CHANNEL	COMPLEX	NO	160 W	43 A	UNSPECIFIED	POWER CONTROL		3.1 V	UNSPECIFIED	RECTANGULAR	7		610 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X21		ISOLATED	Not Qualified			e3			140 ns	UL RECOGNIZED
IXGR32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	47 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	IN-LINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	42 ns	UL RECOGNIZED
MWI50-12T7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	270 W	80 A	UNSPECIFIED	POWER CONTROL		2.15 V	UNSPECIFIED	RECTANGULAR	6		610 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X21		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
IXGQ200N100Y3	Littelfuse				800 W	200 A				4 V			1					Insulated Gate BIP Transistors	150 Cel		1000 V		20 V
IXGR45N120	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	IN-LINE			SILICON						TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1	10	260
VUB160-16NO2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		177 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			10	FLANGE MOUNT		150 Cel	SILICON	1200 V					Gold (Au) - with Nickel (Ni) barrier	UPPER	R-XUFM-X10		ISOLATED	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED		UL RECOGNIZED
MUBW75-12T8	Littelfuse	N-CHANNEL	COMPLEX	NO		110 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	7		610 ns	24	FLANGE MOUNT		125 Cel	SILICON	1200 V					MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified			e3			340 ns	UL RECOGNIZED
IXGQ50N60Y4	Littelfuse				300 W	50 A				4 V			1					Insulated Gate BIP Transistors	150 Cel		600 V		20 V
MUBW100-06A8	Littelfuse	N-CHANNEL	COMPLEX	NO	410 W	125 A	UNSPECIFIED	MOTOR CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	7		180 ns	20	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X20		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			36 ns
IXGQ28N120B	Littelfuse	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3			63 ns
IXGQ150N100Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors	150 Cel		1000 V		20 V
MUBW30-06A7	Littelfuse	N-CHANNEL	COMPLEX	NO		50 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		310 ns	24	FLANGE MOUNT			SILICON	600 V					MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			100 ns
IXGQ25N60Y4	Littelfuse				125 W	25 A				3.5 V			1					Insulated Gate BIP Transistors	150 Cel		600 V		20 V
MUBW100-06	Littelfuse
IXA40RG1200DHGLB-TRR	Littelfuse
IXXP12N65B4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	38 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		245 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				44 ns
IXGA42N30C3	Littelfuse	N-CHANNEL	SINGLE	YES	223 W	250 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	120 ns	229 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	43 ns
IXXA50N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		320 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-55 Cel	20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	75 ns
IXGM30N50	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGP7N60B	Littelfuse	N-CHANNEL	SINGLE	NO	54 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	250 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	5.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				19 ns
MG06400D-BN4MM	Littelfuse																																		NOT SPECIFIED	NOT SPECIFIED
IXGM20N90A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXBH16N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		940 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	220 ns
MIXD80PM650TMI	Littelfuse
IXBR42N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	57 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		1005 ns	3	IN-LINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	176 ns	UL RECOGNIZED
IXBH5N140G	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5.7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT		150 Cel	SILICON	1400 V					MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3	10	260	340 ns
IXYQ40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR							64 ns
IXGP10N90	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXBH5N160G	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	5.7 A	PLASTIC/EPOXY	POWER CONTROL		7.2 V	THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT		150 Cel	SILICON	1600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	340 ns
IXGP15N120B2	Littelfuse	N-CHANNEL	SINGLE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	43 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.