Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

VUB120-16NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

MUBW75-17T8

Littelfuse

N-CHANNEL

COMPLEX

NO

450 W

113 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

1350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

360 ns

UL RECOGNIZED

MUBW50-12A8

Littelfuse

N-CHANNEL

COMPLEX

NO

350 W

85 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

MUBW2512T7

Littelfuse

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

FAST SWITCHING, LOW SATURATION VOLTAGE

e3

140 ns

MUBW20-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

68 W

23 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

MUBW10-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

20 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

MUBW50-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

IXGR60N60C3C1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

198 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

62 ns

IXGR72N60A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.45 V

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

63 ns

IXGQ75N50Y4

Littelfuse

300 W

75 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

MUBW15-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

MWI75-12T8T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

360 W

110 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

740 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

UL RECOGNIZED

IXGQ240N30PB

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

240 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

133 ns

MWI50-12F7

Littelfuse

VUB120-12NO2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

e4

UL RECOGNIZED

IXGR64N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

490 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

e1

10

260

66 ns

UL RECOGNIZED

IXGR60N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

198 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

54 ns

MUBW8-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

8 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

7

25

FLANGE MOUNT

SILICON

600 V

PURE TIN

UPPER

R-PUFM-P25

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

IXGR50N90B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

SILICON

900 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

TO-247AD

e1

10

260

MUBW6-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

38 W

7 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

360 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

40 ns

IXGQ50N100Y4

Littelfuse

300 W

50 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

MUBW40-12T7

Littelfuse

N-CHANNEL

COMPLEX

NO

220 W

62 A

UNSPECIFIED

MOTOR CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

610 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

140 ns

UL RECOGNIZED

MWI75-12A8

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

500 W

125 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

700 ns

33

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X33

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

150 ns

MUBW25-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

77 W

27.5 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

230 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

65 ns

IXGQ50N90Y4

Littelfuse

250 W

50 A

4.5 V

1

Insulated Gate BIP Transistors

150 Cel

900 V

20 V

VUB160-16NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

IXGR72N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

150 ns

244 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

390 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

64 ns

IXGQ20N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

43 ns

MWI100-12A8

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

640 W

160 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

690 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

e3

160 ns

UL RECOGNIZED

IXGQ28N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

550 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

63 ns

IXGQ100N100Y3

Littelfuse

400 W

100 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

MUBW50-06

Littelfuse

MUBW30-12A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

570 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

180 ns

UL RECOGNIZED

IXGQ200N60Y3

Littelfuse

800 W

200 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MUBW50-12T8

Littelfuse

N-CHANNEL

COMPLEX

NO

80 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

140 ns

UL RECOGNIZED

MID150-12A4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

180 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

570 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

UL RECOGNIZED

MUBW15-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

61 W

18 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

MID145-12A3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

735 W

160 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

690 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

160 ns

UL RECOGNIZED

IXGR35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

77 ns

UL RECOGNIZED

VUB160-12NO2L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

e4

UL REGISTERED

IXGR72N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e1

10

260

63 ns

MWI15-12A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

140 W

30 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

570 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

175 ns

UL RECOGNIZED

VUB120-16NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

IXGQ75N100Y4

Littelfuse

350 W

75 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

IXGQ25N90Y4

Littelfuse

150 W

25 A

4.5 V

1

Insulated Gate BIP Transistors

150 Cel

900 V

20 V

MUBW15-12T7

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

FAST SWITCHING, LOW SATURATION VOLTAGE

e3

140 ns

IXGQ6N170AM

Littelfuse

N-CHANNEL

SINGLE

NO

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

91 ns

MUBW25-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

31 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

25

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.