Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGH100N30C3

Littelfuse

N-CHANNEL

SINGLE

NO

460 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

244 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

61 ns

IXGT30N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

53 ns

IXYP20N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

132 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

51 ns

IXYP20N65C3D1M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

18 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

132 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

51 ns

IXYX25N250CV1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

937 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

575 ns

3

IN-LINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-247

51 ns

IXXH50N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

75 ns

IXXH30N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

230 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

10

260

65 ns

IXXX100N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

92 ns

IXXX100N60C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

170 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

95 ns

IXBH42N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

104 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

150 Cel

SILICON

2500 V

-55 Cel

25 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

652 ns

IXGT6N170A

Littelfuse

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

65 ns

271 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

91 ns

MWI50-12A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

350 W

85 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

6

570 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

IXGH24N170

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

105 ns

IXXH50N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

69 ns

MMIX4G20N250

Littelfuse

N-CHANNEL

COMPLEX

YES

100 W

23 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

3.1 V

GULL WING

RECTANGULAR

4

1066 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

DUAL

R-PDSO-G9

ISOLATED

217 ns

MWI50-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

225 W

72 A

UNSPECIFIED

POWER CONTROL

2.4 V

PIN/PEG

RECTANGULAR

6

330 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P13

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

IXGH30N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

331 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

53 ns

IXXH100N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

220 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

92 ns

MG06100S-BR1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

390 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL RECOGNIZED

IXA70I1200NA

Littelfuse

N-CHANNEL

SINGLE

NO

350 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747; UL RECOGNIZED

IXBH10N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

3.8 V

THROUGH-HOLE

RECTANGULAR

1

1800 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

10

260

63 ns

IXGH10N170

Littelfuse

N-CHANNEL

SINGLE

NO

110 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

300 ns

IXGH10N170A

Littelfuse

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

107 ns

IXGH16N170A

Littelfuse

N-CHANNEL

SINGLE

NO

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

330 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

97 ns

IXGH6N170

Littelfuse

N-CHANNEL

SINGLE

NO

75 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

85 ns

IXGR16N170AH1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

255 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

97 ns

UL RECOGNIZED

IXGR32N170H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

920 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AD

90 ns

UL RECOGNIZED

IXGX50N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

485 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

60 ns

IXYH40N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

84 ns

IXGH100N30B3

Littelfuse

N-CHANNEL

SINGLE

NO

460 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

143 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

10

260

78 ns

IXGH32N170

Littelfuse

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

920 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

90 ns

IXGH48N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

IXGH48N60A3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

IXGH50N90B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

820 ns

3

FLANGE MOUNT

150 Cel

SILICON

900 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

48 ns

IXXH110N65C4

Littelfuse

N-CHANNEL

SINGLE

NO

880 W

235 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

71 ns

IXBF20N360

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

45 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

922 ns

IXBF32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

573 ns

IXBT42N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

104 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

950 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

652 ns

IXBX55N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

130 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

637 ns

IXDH20N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

275 W

38 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

TO-247AD

e3

10

260

175 ns

IXEL40N400

Littelfuse

N-CHANNEL

SINGLE

NO

380 W

40 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1170 ns

3

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

4000 V

20 V

7 V

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

IXXH80N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

123 ns

IXXX140N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 W

340 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

COLLECTOR

128 ns

IXYB82N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

164 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

107 ns

IXYH30N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

59 ns

IXYL60N450

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN RESISTOR

NO

417 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

1580 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

724 ns

MIXA80W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MMIX1Y100N120C3H1

Littelfuse

N-CHANNEL

YES

400 W

92 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.